MBR735 thru MBR7150
Taiwan Semiconductor
CREAT BY ART
Schottky Barrier Rectifier
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
TO-220AC
MECHANICAL DATA
Case: TO-220AC
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.85 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
MBR
735
35
MBR
745
45
MBR
750
50
MBR
760
60
MBR
790
90
MBR
7100 7150
100
70
MBR
PARAMETER
SYMBOL
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
150
105
150
V
V
V
A
24
31
35
42
63
Maximum DC blocking voltage
35
45
50
60
90
100
Maximum average forward rectified current
IF(AV)
7.5
Peak repetitive forward current
(Rated VR, Square Wave, 20KHz)
IFRM
15
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
IRRM
150
A
A
Peak repetitive reverse surge current (Note 1)
1
-
0.5
Maximum instantaneous forward voltage (Note 2)
IF=7.5 A, TJ=25℃
0.75
0.92
0.95
IF=7.5 A, TJ=125℃
VF
0.57
0.84
0.72
0.65
0.82
V
0.92
IF=15 A, TJ=25℃
-
-
-
-
-
-
IF=15 A, TJ=125℃
0.1
Maximum reverse current @ rated VR TJ=25 ℃
TJ=125 ℃
IR
mA
15
10
5
Voltage rate of change (Rated VR)
Typical thermal resistance
10000
dV/dt
RθJC
RθJA
TJ
V/μs
5
15
OC/W
OC
OC
Operating junction temperature range
Storage temperature range
- 55 to +150
- 55 to +175
TSTG
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
Document Number: DS_D1308048
Version: J13