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MBR760HC0 PDF预览

MBR760HC0

更新时间: 2024-01-21 20:17:09
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描述
Schottky Barrier Rectifier

MBR760HC0 数据手册

 浏览型号MBR760HC0的Datasheet PDF文件第2页浏览型号MBR760HC0的Datasheet PDF文件第3页浏览型号MBR760HC0的Datasheet PDF文件第4页 
MBR735 thru MBR7150  
Taiwan Semiconductor  
CREAT BY ART  
Schottky Barrier Rectifier  
FEATURES  
- Low power loss, high efficiency  
- Guardring for overvoltage protection  
- High surge current capability  
- Compliant to RoHS Directive 2011/65/EU and  
in accordance to WEEE 2002/96/EC  
- Halogen-free according to IEC 61249-2-21 definition  
TO-220AC  
MECHANICAL DATA  
Case: TO-220AC  
Molding compound, UL flammability classification rating 94V-0  
Base P/N with suffix "G" on packing code - halogen-free  
Base P/N with prefix "H" on packing code - AEC-Q101 qualified  
Terminal: Matte tin plated leads, solderable per JESD22-B102  
Meet JESD 201 class 1A whisker test,  
with prefix "H" on packing code meet JESD 201 class 2 whisker test  
Polarity: As marked  
Mounting torque: 5 in-lbs maximum  
Weight: 1.85 g (approximately)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)  
MBR  
735  
35  
MBR  
745  
45  
MBR  
750  
50  
MBR  
760  
60  
MBR  
790  
90  
MBR  
7100 7150  
100  
70  
MBR  
PARAMETER  
SYMBOL  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
150  
105  
150  
V
V
V
A
24  
31  
35  
42  
63  
Maximum DC blocking voltage  
35  
45  
50  
60  
90  
100  
Maximum average forward rectified current  
IF(AV)  
7.5  
Peak repetitive forward current  
(Rated VR, Square Wave, 20KHz)  
IFRM  
15  
A
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
IRRM  
150  
A
A
Peak repetitive reverse surge current (Note 1)  
1
-
0.5  
Maximum instantaneous forward voltage (Note 2)  
IF=7.5 A, TJ=25  
0.75  
0.92  
0.95  
IF=7.5 A, TJ=125℃  
VF  
0.57  
0.84  
0.72  
0.65  
0.82  
V
0.92  
IF=15 A, TJ=25℃  
-
-
-
-
-
-
IF=15 A, TJ=125℃  
0.1  
Maximum reverse current @ rated VR TJ=25 ℃  
TJ=125 ℃  
IR  
mA  
15  
10  
5
Voltage rate of change (Rated VR)  
Typical thermal resistance  
10000  
dV/dt  
RθJC  
RθJA  
TJ  
V/μs  
5
15  
OC/W  
OC  
OC  
Operating junction temperature range  
Storage temperature range  
- 55 to +150  
- 55 to +175  
TSTG  
Note 1: tp = 2.0 μs, 1.0KHz  
Note 2: Pulse test with PW=300μs, 1% duty cycle  
Document Number: DS_D1308048  
Version: J13  

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