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MBR760

更新时间： 2024-09-22 22:51:27
品牌 Logo 应用领域
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页数 文件大小 规格书
2页 68K
描述
7.5A SCHOTTKY BARRIER RECTIFIER

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中文翻译

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MBR760 数据手册

 浏览型号MBR760的Datasheet PDF文件第2页 
MBR730 - MBR760  
7.5A SCHOTTKY BARRIER RECTIFIER  
Features  
·
·
Schottky Barrier Chip  
Guard Ring Die Construction for  
Transient Protection  
TO-220AC  
·
·
·
Low Power Loss, High Efficiency  
High Surge Capability  
High Current Capability and Low Forward  
Voltage Drop  
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Polarity  
Protection Application  
Plastic Material: UL Flammability  
Classification Rating 94V-0  
L
Dim  
A
B
C
D
E
Min  
14.22  
9.65  
2.54  
5.84  
¾
Max  
15.88  
10.67  
3.43  
B
M
C
D
E
·
·
K
A
6.86  
6.35  
Pin 1  
Pin 2  
G
J
12.70  
0.51  
14.73  
1.14  
G
K
L
3.53Æ 4.09Æ  
Mechanical Data  
J
N
3.56  
1.14  
0.30  
2.03  
4.83  
4.83  
1.40  
0.64  
2.92  
5.33  
·
·
Case: Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
M
N
P
R
P
+
·
·
·
·
Polarity: See Diagram  
Pin 1 +  
Pin 2 -  
Case  
Weight: 2.3 grams (approx.)  
Mounting Position: Any  
Marking: Type Number  
R
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
MBR  
730  
MBR  
735  
MBR  
740  
MBR  
745  
MBR  
750  
MBR  
760  
Characteristic  
Symbol  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
30  
21  
35  
40  
28  
45  
50  
35  
60  
42  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
24.5  
31.5  
V
A
Average Rectified Output Current  
(Note 1)  
7.5  
@ TC = 125°C  
Non-Repetitive Peak Forward Surge Current 8.3ms  
single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
150  
A
Forward Voltage Drop  
@ IF = 7.5A, TC = 25°C  
@IF = 7.5A, TC = 125°C  
0.55  
0.70  
0.70  
0.75  
VFM  
IRM  
V
Peak Reverse Current  
at Rated DC Blocking Voltage  
@TC 25°C  
=
1.0  
15  
1.0  
50  
mA  
@ TC = 125°C  
Cj  
Typical Junction Capacitance (Note 2)  
400  
3.5  
pF  
°C/W  
V/ms  
°C  
RqJc  
Typical Thermal Resistance Junction to Case (Note 1)  
Voltage Rate of Change (Rated VR)  
dV/dt  
Tj, TSTG  
10,000  
Operating and Storage Temperature Range  
-65 to +150  
Notes:  
1. Thermal resistance junction to case mounted on heatsink.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.  
DS23007 Rev. 7 - 2  
1 of 2  
MBR730-MBR760  
12

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MBR760 替代型号

型号 品牌 替代类型 描述 数据表
STPS8H100D STMICROELECTRONICS

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