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MBR6030PT PDF预览

MBR6030PT

更新时间: 2024-02-22 22:11:26
品牌 Logo 应用领域
美台 - DIODES 整流二极管瞄准线功效局域网
页数 文件大小 规格书
2页 67K
描述
60A SCHOTTKY BARRIER RECTIFIER

MBR6030PT 技术参数

是否无铅: 不含铅生命周期:Contact Manufacturer
包装说明:O-MUPM-D1Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.54Is Samacsys:N
应用:POWER外壳连接:ANODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.65 V
JEDEC-95代码:DO-203ABJESD-30 代码:O-MUPM-D1
最大非重复峰值正向电流:700 A元件数量:1
相数:1端子数量:1
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:60 A封装主体材料:METAL
封装形状:ROUND封装形式:POST/STUD MOUNT
最大重复峰值反向电压:30 V最大反向电流:5000 µA
表面贴装:NO技术:SCHOTTKY
端子形式:SOLDER LUG端子位置:UPPER
Base Number Matches:1

MBR6030PT 数据手册

 浏览型号MBR6030PT的Datasheet PDF文件第2页 
MBR6030PT - MBR6045PT  
60A SCHOTTKY BARRIER RECTIFIER  
Features  
·
·
Schottky Barrier Chip  
Guard Ring Die Construction for  
Transient Protection  
Low Power Loss, High Efficiency  
High Surge Capability  
High Current Capability and Low Forward  
Voltage Drop  
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Polarity  
Protection Application  
Plastic Material: UL Flammability  
Classification Rating 94V-0  
TO-3P  
Dim  
A
B
C
D
E
Min  
3.20  
Max  
3.50  
·
·
·
A
B
4.59  
5.16  
H
20.80  
19.70  
2.10  
21.30  
20.20  
2.40  
·
·
J
S
R
C
D
G
H
J
0.51  
0.76  
K
15.90  
1.70  
16.40  
2.70  
L
P*  
*2 Places  
Q
3.10Æ  
3.50  
3.30Æ  
4.51  
K
L
G
Mechanical Data  
·
N
M
N
P
5.20  
5.70  
Case: Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
1.12  
1.22  
·
1.93  
2.18  
E
M
M
·
·
·
·
Polarity: As Marked on Body  
Weight: 5.6 grams (approx.)  
Mounting Position: Any  
Q
R
S
2.97  
3.22  
11.70  
12.80  
4.30 Typical  
Marking: Type Number  
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
MBR  
6030PT  
MBR  
6035PT  
MBR  
6040PT  
MBR  
6045PT  
Characteristic  
Symbol  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
30  
21  
35  
25  
40  
28  
45  
32  
V
VR(RMS)  
RMS Reverse Voltage  
V
A
Average Rectified Output Current  
@ TC = 125°C  
IO  
60  
(Note 1)  
Non-Repetitive Peak Forward Surge Current 8.3ms  
single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
500  
A
Forward Voltage Drop  
@ IF = 30A, TC  
= 25°C  
0.62  
0.55  
0.75  
VFM  
@ IF = 30A, TC = 125°C  
V
@ IF = 60A, TC  
@ TC  
=
=
25°C  
25°C  
Peak Reverse Current  
at Rated DC Blocking Voltage  
1.0  
50  
IRM  
mA  
@ TC = 100°C  
Cj  
Typical Junction Capacitance (Note 2)  
650  
1.0  
pF  
K/W  
°C  
RqJc  
Typical Thermal Resistance Junction to Case (Note 1)  
Operating and Storage Temperature Range  
Tj, TSTG  
-55 to +150  
Notes:  
1. Thermal resistance junction to case mounted on heatsink.  
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
DS30053 Rev. B-2  
1 of 2  
MBR6030PT - MBR6045PT  

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