Datasheet > MBR60020CT_V01

MBR60020CT_V01

更新时间： 2024-09-26 01:11:31

品牌	Logo	应用领域
GENESIC		/
页数	文件大小	规格书
3页	718K
描述
Silicon Power Schottky Diode

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中文翻译

获取价格

数据手册

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MBR60020CT_V01 数据手册

MBR60020CT thru MBR60040CTR

V_RRM= 20 V - 40 V

I_F(AV)= 600 A

Silicon Power

Schottky Diode

Features

• High Surge Capability

• Types from 20 V to 40 V V_RRM

Twin Tower Package

• Not ESD Sensitive

Maximum ratings, at T_j= 25 °C, unless otherwise specified ("R" devices have leads reversed)

Conditions

MBR60035CT(R) MBR60040CT(R)

Parameter

Symbol

MBR60020CT(R) MBR60030CT(R)

Unit

Repetitive peak reverse

voltage

V_RRM

V_RMS

V_DC

T_j

RMS reverse voltage

DC blocking voltage

Operating temperature

Storage temperature

-55 to 150

°C

T_stg

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Conditions

MBR60035CT(R) MBR60040CT(R)

Parameter

Symbol

MBR60020CT(R) MBR60030CT(R)

Unit

Average forward current

(per pkg)

T_C= 125 °C

I_F(AV)

600

Peak forward surge

current (per leg)

I_FSMt_p= 8.3 ms, half sine

4000

Maximum forward

voltage (per leg)

V_FI_FM= 300 A, T_j= 25 °C

T_j= 25 °C

0.75

Reverse current at rated

DC blocking voltage

(per leg)

I_R

T_j= 100 °C

T_j= 150 °C

Thermal characteristics

Thermal resistance,

junction-case, per leg

R_ΘJC

0.28

°C/W

Oct. 2018

http://www.diodemodule.com/silicon_products/modules/mbr60020ct.pdf

12 3

中文翻译

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