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MBR35005W_V01 PDF预览

MBR35005W_V01

更新时间: 2024-09-29 02:49:59
品牌 Logo 应用领域
虹扬 - HY /
页数 文件大小 规格书
3页 353K
描述
Silicon Bridge Rectifiers

MBR35005W_V01 数据手册

 浏览型号MBR35005W_V01的Datasheet PDF文件第2页浏览型号MBR35005W_V01的Datasheet PDF文件第3页 
www.hygroup.com.tw  
MBR35005W THRU MBR3510W  
Reverse Voltage - 50 to 1000 Volts  
Silicon Bridge Rectifiers  
Forward Current - 35 Amperes  
Features  
Low forward voltage drop  
MBRW  
Electrically isolated base -2000 Volts  
High surge forward current capability  
RoHS  
COMPLIANT  
Materials used carries U/L recognition  
Mechanical Data  
Polarity: Symbol Marked on body  
Mounting position: Any  
Note: Products with logo  
or  
are made by HY Electronic (Cayman) Limited.  
Applications  
General purpose use in AC/DC bridge full wave rectification,  
for power supply, industrial automation applications, etc.  
Package Outline Dimensions in Inches (Millimeters)  
Maximum Ratings and Electrical Characteristics  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
MBR  
MBR  
MBR  
MBR  
MBR  
MBR  
MBR  
Characteristics  
Symbol  
Unit  
35005W 3501W 3502W 3504W 3506W 3508W 3510W  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
I(AV)  
50  
35  
100  
70  
200  
140  
400  
280  
35  
600  
420  
800  
560  
1000  
700  
V
V
A
Maximum Average Forward Rectified Current @TC=55  
Peak Forward Surge Current, 8.3mS Single Half Sine-Wave,  
Superimposed on Rated Load (JEDEC Method)  
IFSM  
400  
A
I2t Rating for Fusing (t<8.3mS)  
I2t  
A2s  
V
664  
1.1  
Peak Forward Voltage per Diode at 17.5A DC  
Maximum DC Reverse Current at Rated  
DC Blocking Voltage per Diode @TJ=25℃  
Operating Junction Temperature Range  
Storage Temperature Range  
VF  
IR  
10  
μA  
-55 to +150  
-55 to +150  
TJ  
TSTG  
MBR35*W-S-00-00  
Rev. 11, 18-May-2020  

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