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MBR350 PDF预览

MBR350

更新时间: 2024-09-28 12:57:15
品牌 Logo 应用领域
森美特 - SUNMATE 二极管
页数 文件大小 规格书
2页 367K
描述
3A Patch Schottky diode 50V DO-201 series

MBR350 数据手册

 浏览型号MBR350的Datasheet PDF文件第2页 
MBR320-MBR3100  
SCHOTTKY BARRIER RECTIFIER DIODES  
VOLTAGE RANGE: 20 - 100V  
CURRENT: 3.0 A  
Features  
!
!
Schottky Barrier Chip  
Guard Ring Die Construction for  
Transient Protection  
!
!
!
High Current Capability  
Low Power Loss, High Efficiency  
High Surge Current Capability  
A
B
A
!
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Polarity  
C
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Protection Applications  
D
Mechanical Data  
DO-201AD  
!
!
Case: DO-201AD, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
Weight: 1.2 grams (approx.)  
Mounting Position: Any  
Dim  
A
Min  
25.40  
7.20  
1.20  
4.80  
Max  
¾
B
9.50  
1.30  
5.30  
!
!
!
!
C
D
All Dimensions in mm  
Marking: Type Number  
Maximum Ratings and Electrical Characteristics  
TA = 25C unless otherwise specified  
For capacitive load, derate current by 20%.  
Single phase, half wave, 60Hz, resistive or inductive load.  
Characteristic  
Symbol MBR320 MBR330 MBR340 MBR350 MBR360 MBR380 MBR3100 Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
20  
14  
30  
21  
40  
28  
50  
35  
60  
42  
80  
56  
100  
70  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
V
A
Average Rectified Output Current  
(Note 1)  
@TL = 95°C  
3.0  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
80  
A
Forward Voltage  
@IF = 3.0A  
VFM  
IRM  
0.50  
0.75  
0.85  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
0.5  
20  
mA  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 1)  
Operating and Storage Temperature Range  
Cj  
250  
20  
pF  
RJA  
°C/W  
°C  
Tj, TSTG  
-65 to +150  
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
1 of 2  
www.sunmate.tw  

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Bridge Rectifier Diode, 1 Phase, 35A, 100V V(RRM), Silicon, MBRW, 4 PIN