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MBR350 PDF预览

MBR350

更新时间: 2024-09-28 11:11:51
品牌 Logo 应用领域
威世 - VISHAY 整流二极管
页数 文件大小 规格书
6页 120K
描述
Schottky Rectifier, 3 A

MBR350 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:O-PALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.11其他特性:FREE WHEELING DIODE, HIGH RELIABILITY
应用:HIGH POWER外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.49 V
JESD-30 代码:O-PALF-W2最大非重复峰值正向电流:460 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:50 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MBR350 数据手册

 浏览型号MBR350的Datasheet PDF文件第2页浏览型号MBR350的Datasheet PDF文件第3页浏览型号MBR350的Datasheet PDF文件第4页浏览型号MBR350的Datasheet PDF文件第5页浏览型号MBR350的Datasheet PDF文件第6页 
VS-MBR350, VS-MBR350-M3, VS-MBR360, VS-MBR360-M3  
www.vishay.com  
Vishay Semiconductors  
Schottky Rectifier, 3 A  
FEATURES  
• Low profile, axial leaded outline  
• Very low forward voltage drop  
• High frequency operation  
Cathode  
Anode  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
C-16  
• Guard ring for enhanced ruggedness and long  
term reliability  
• Compliant to RoHS Directive 2002/95/EC  
• Designed and qualified for commercial level  
PRODUCT SUMMARY  
Package  
DO-201AD (C-16)  
3 A  
• Halogen-free according to IEC 61249-2-21 definition  
(-M3 only)  
IF(AV)  
VR  
50 V, 60 V  
0.64 V  
DESCRIPTION  
VF at IF  
The VS-MBR350..., VS-MBR350 axial leaded Schottky  
rectifier has been optimized for very low forward voltage  
drop, with moderate leakage. Typical applications are in  
switching power supplies, converters, freewheeling diodes,  
and reverse battery protection.  
I
RM max.  
15 mA at 125 °C  
150 °C  
TJ max.  
Diode variation  
EAS  
Single die  
5.0 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
3.0  
UNITS  
Rectangular waveform  
A
V
50/60  
tp = 5 μs sine  
460  
A
VF  
3 Apk, TJ = 25 °C  
0.73  
V
TJ  
- 40 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-MBR350  
VS-MBR350-M3  
VS-MBR360  
VS-MBR360-M3  
UNITS  
Maximum DC reverse voltage  
VR  
50  
50  
60  
60  
V
Maximum working peak  
reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TL = 50 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward current  
See fig. 4  
IF(AV)  
3.0  
A
Maximum peak one cycle  
non-repetitive surge current  
See fig. 6  
5 µs sine or 3 µs rect. pulse  
460  
Followinganyratedload  
condition and with rated  
VRRM applied  
IFSM  
10 ms sine or 6 ms rect. pulse  
80  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 1 A, L = 10 mH  
5.0  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by, TJ maximum VA = 1.5 x VR typical  
1.0  
Revision: 13-Oct-11  
Document Number: 93450  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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