Datasheet > MBR3045CT

MBR3045CT

更新时间： 2024-11-20 04:41:07

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
2页	50K
描述
SCHOTTKY BARRIER RECTIFIERS

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中文翻译

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数据手册

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MBR3045CT 数据手册

MBR3020CT~MBR30100CT

SCHOTTKY BARRIER RECTIFIERS

Unit : inch (mm)

TO-220AB

20 to 100 Volts

CURRENT 30.0 Amperes

VOLTAGE

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O.

Flame Retardant Epoxy Molding Compound.

.419(10.66)

.196(5.00)

.163(4.16)

.387(9.85)

.139(3.55)

MIN

.054(1.39)

.045(1.15)

• Exceeds environmental standards of

MIL-S-19500/228

• Low power loss, high efficiency.

• Low forwrd voltge, high current capability

• High surge capacity.

• For use in low voltage,high frequency inverters

free wheeling , and polarlity protection applications.

• In compliance with EU RoHS 2002/95/EC directives

.038(0.96)

.019(0.50)

.025(0.65)MAX

MECHANICAL DATA

• Case: TO-220AB Molded plastic

.1(2.54)

• Terminals: Solder plated, solderable per MIL-STD-750, Method 2026

• Polarity: As marked.

• Standard packaging: Any

Positive CT

• Weight: 0.083 ounces, 2.24grams.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

PARAMETER

SYMBOL MBR3020CT MBR3030CT MBR3035CT MBR3040CT MBR3045CT MBR3045CT MBR3050CT MBR3060CT MBR3080CT MBR30100CT UNITS

Maximum Recurrent Peak Reverse Voltage

V_R

24.5

31.5

100

Maximum RMS Voltage

Maximum DC Blocking Voltage

V_D

100

Maximum Average Forward Current lead length at

I_F

_C=90^O

( A V

)

Peak Forward Surge Current :8.3ms single half sine-

wave superimposed on rated load(JEDEC method)

I_F

275

Maximum Forward Voltage at 15A, per leg

V_F

0.55

0.70

0.80

Maximum DC Reverse Current

at Rated DC Blocking Voltage

_J=25 ^OC

0.1

I_R

_J=100^O

Typical Thermal Resistance

R_{θ J}

1.5

^OC

Operating Junction and Storage Temperature Range

_J,T_S

-50 TO

150

^OC

T G

NOTES:

Both Bonding and Chip structure are available.

PAGE . 1

STAD-MAR.14.2006

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