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MBR30100PT PDF预览

MBR30100PT

更新时间: 2024-02-10 13:42:06
品牌 Logo 应用领域
鲁光 - LGE 肖特基二极管局域网
页数 文件大小 规格书
2页 239K
描述
Schottky Barrier Rectifiers

MBR30100PT 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PSFM-T3Reach Compliance Code:compliant
风险等级:5.6其他特性:FREE WHEELING DIODE
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.05 V
JEDEC-95代码:TO-247ADJESD-30 代码:R-PSFM-T3
最大非重复峰值正向电流:150 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:100 V最大反向电流:1000 µA
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MBR30100PT 数据手册

 浏览型号MBR30100PT的Datasheet PDF文件第2页 
MBR3030PT-MBR30100PT  
Schottky Barrier Rectifiers  
VOLTAGE RANGE: 30 - 100 V  
CURRENT: 30 A  
Features  
High surge capacity.  
TO-3P(TO-247AD)  
For use in low voltage, high frequency inverters, free  
111 wheeling, and polarity protection applications.  
15.8± 0.2  
8.0± 0.2  
5.0± 0.15  
2.0± 0.15  
Metal silicon junction, majority carrier conduction.  
High current capacity, low forward voltage drop.  
Guard ring for over voltage protection.  
φ3.6± 0.15  
Mechanical Data  
PIN  
1
2
3
2.4± 0.2  
Case:JEDEC TO-3P,molded plastic body  
2.2± 0.15  
1.2± 0.15  
3.0± 0.1  
Terminals:Solderable per MIL-STD-750,  
1
1
Method 2026  
Polarity: As marked  
Position: Any  
0.6± 0.1  
5.4± 0.15  
Weight: 0.223 ounce, 6.3 grams  
Dimensions in millimeters  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
ambient temperature unless otherwise specified.  
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.  
Ratings at 25  
MBR MBR  
MBR MBR MBR MBR MBR MBR  
UNITS  
3030PT 3035PT 3040PT 3045PT 3050PT 3060PT 3080PT 30100PT  
Maximum recurrent peak reverse voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
30  
21  
30  
35  
25  
35  
40  
28  
40  
45  
32  
45  
50  
35  
50  
60  
42  
60  
80  
56  
80  
100  
70  
V
V
V
Maximum DC blocking voltage  
100  
Maximum average forw ard total device  
IF(AV)  
IFSM  
30  
A
A
m rectified current @TC = 105°C  
Peak forw ard surge current 8.3ms single half  
200  
b
sine-w ave superimposed on rated load  
Maximum forward  
voltage  
(IF=15A,TC=25  
(IF=15A,TC=125  
(IF=30A,TC=25  
)
-
0.80  
0.85  
)
0.57  
0.84  
0.70  
0.95  
0.65  
0.95  
V
VF  
)
(Note 1)  
(IF=30A,TC=125  
0.72  
0.85  
0.75  
)
Maximum reverse current  
at rated DC blocking voltage  
@TC=25  
1.0  
60  
0.2  
IR  
m A  
@TC=125  
40  
Maximum thermal resistance (Note2)  
Operating junction temperature range  
Storage temperature range  
RθJC  
TJ  
6.8  
4.4  
/W  
- 55 ---- + 150  
- 55 ---- + 150  
TSTG  
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.  
2. Thermal resistance from junction to case.  
http://www.luguang.cn  
mail:lge@luguang.cn  

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