Datasheet > MBR30100PTR

MBR30100PTR

更新时间： 2022-02-26 10:14:27

品牌	Logo	应用领域
THINKISEMI		/
页数	文件大小	规格书
2页	948K
描述
30 Amperes Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers

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数据手册

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MBR30100PTR 数据手册

MBR3035PTR thru MBR30200PTR

Pb Free Plating Product

30 Amperes Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers

TO-3PN/TO-3PB

Features

ꢀ Standard MBR matured technology with high reliablity

ꢀ Low forward voltage drop

ꢀ High current capability

Bottom Side Metal Heat Sink

ꢀ Low reverse leakage current

ꢀ High surge current capability

Application

Automotive Inverters/Solar Inverters

ꢀ

Plating Power Supply,SMPS and UPS

Car Audio Amplifiers and Sound Device Systems

Mechanical Data

ꢀ Case: Heatsink TO-3PN/TO-3PB

ꢀ Epoxy: UL 94V-0 rate flame retardant

ꢀ

method 208

Terminals: Solderable per MIL-STD-202

ꢀ Polarity: As marked on diode body

ꢀ Mounting position: Any

ꢀ Weight: 6.5 gram approximately

Case

Series

Doubler

Common Cathode Common Anode Tandem Polarity Tandem Polarity

Suffix "PTS"

Negative

Positive

Suffix "PT"

Suffix "PTR"

Suffix "PTD"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

MBR MBR MBR MBR MBR MBR MBR MBR

PARAMETER

SYMBOL 3035 3045 3050 3060 3090 30100 30150 30200 UNIT

PTR

100

PTR

150

105

150

PTR

200

140

200

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

Maximum DC blocking voltage

100

Maximum average forward rectified current

I_F(AV)

Peak repetitive forward current

(Rated V_R, Square wave, 20KHz)

I_FRM

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

I_RRM

200

Peak repetitive reverse surge Current (Note 1)

Maximum instantaneous forward voltage (Note 2)

I_F=15A, T_J=25℃

0.75

0.85

0.95

0.92

1.02

0.98

1.05

I_F=15A, T_J=125℃

V_F

0.60

0.82

0.73

0.65

0.75

I_F=30A, T_J=25℃

1.10

I_F=30A, T_J=125℃

0.5

0.1

Maximum reverse current @ rated VR T_J=25 ℃

T_J=125 ℃

I_R

Voltage rate of change,(Rated V_R)

Typical thermal resistance

10,000

1.4

dV/dt

R_θJC

T_J

V/μs

℃

Operating junction temperature range

Storage temperature range

- 55 to +150

T_STG

Note 1: 2.0μs Pulse Width, f=1.0KHz

Note 2: Pulse Test : 300μs Pulse Width, 1% Duty Cycle

Rev.07C

Page 1/2

http://www.thinkisemi.com/

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