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MBR30100PT-E3

更新时间： 2024-09-24 05:23:35
品牌 Logo 应用领域
威世 - VISHAY 局域网功效瞄准线二极管
页数 文件大小 规格书
1页 27K
描述
DIODE 30 A, 100 V, SILICON, RECTIFIER DIODE, TO-247AD, Rectifier Diode

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中文翻译

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MBR30100PT-E3 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：R-PSFM-T3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.38其他特性：FREE WHEELING DIODE, LOW POWER LOSS
应用：EFFICIENCY外壳连接：CATHODE
配置：COMMON CATHODE, 2 ELEMENTS二极管元件材料：SILICON
二极管类型：RECTIFIER DIODEJEDEC-95代码：TO-247AD
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：2相数：1
端子数量：3最高工作温度：150 °C
最大输出电流：30 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
最大重复峰值反向电压：100 V表面贴装：NO
技术：SCHOTTKY端子面层：MATTE TIN
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

MBR30100PT-E3 数据手册

  
MBR3090PT thru MBR30100PT  
New Product  
Vishay Semiconductor  
High Voltage Dual Schottky Rectifier  
Rev. Voltage 90 to 100 V  
Forward Current 30A  
Features  
• Plastic package has Underwriters Laboratory  
Flammability Classifications 94V-0  
• Dual rectifier construction, positive center-tap  
• Metal silicon junction, majority carrier conduction  
• Low power loss, high efficiency  
• High current capability, low forward voltage drop  
• High surge capability  
• For use in low voltage, high frequency inverters,  
free-wheeling, and polarity protection applications  
• Guardring for overvoltage protection  
• High temperature soldering guaranteed:  
250°C/10 seconds, 0.17” (4.3mm) from case  
TO-247AD  
0.245 (6.2)  
0.225 (5.7)  
0.645 (16.4)  
0.625 (15.9)  
0.203 (5.16)  
0.078 REF  
(1.98)  
0.193 (4.90)  
0.323 (8.2)  
0.313 (7.9)  
10°  
30  
0.170  
(4.3)  
10  
TYP.  
BOTH SIDES  
0.840 (21.3)  
0.820 (20.8)  
0.142 (3.6)  
0.138 (3.5)  
0.086 (2.18)  
0.076 (1.93)  
1
REF.  
2
3
1
BOTH  
SIDES  
0.118 (3.0)  
0.108 (2.7)  
0.127 (3.22)  
0.117 (2.97)  
0.160 (4.1)  
0.140 (3.5)  
Mechanical Data  
0.795 (20.2)  
0.775 (19.6)  
PIN 2  
CASE  
PIN 1  
PIN 3  
Case: JEDEC TO-247AD molded plastic body  
Terminals: Lead solderable per MIL-STD-750, Method 2026  
Polarity: As marked Mounting Position: Any  
Mounting Torque: 10 in-lbs max.  
Dimensions  
in inches and  
(millimeters)  
0.225 (5.7)  
0.205 (5.2)  
0.030 (0.76)  
0.020 (0.51)  
0.048 (1.22)  
0.044 (1.12)  
Weight: 0.2oz., 5.6g  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
VRRM  
VRWM  
VDC  
MBR3090PT  
MBR30100PT  
Unit  
Maximum repetitive peak reverse voltage  
Maximum working peak reverse voltage  
Maximum DC blocking voltage  
90  
90  
90  
100  
V
100  
V
100  
V
Maximum average forward rectified current (SEE FIG. 1)  
IF(AV)  
30  
30  
A
Peak repetitive forward current per leg at TC=105°C  
(rated VR, square wave, 20 KHZ)  
IFRM  
A
A
Peak forward surge current, 8.3ms single  
half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
TBD  
Peak repetitive reverse surge current (NOTE 1)  
Thermal resistance from junction to case per leg  
Voltage rate of change at (rated VR)  
Maximum operating junction temperature  
Storage temperature range  
IRRM  
RΘJC  
dv/dt  
TJ  
0.5  
1.4  
A
°C/W  
V/µs  
°C  
10,000  
150  
TSTG  
– 65 to +175  
°C  
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
MBR3090PT  
MBR30100PT  
Unit  
Maximum instantaneous  
forward voltage per leg at: (NOTE 2) IF = 15A, TC = 125°C  
IF = 15A, TC = 25°C  
0.85  
0.75  
VF  
V
Maximum instantaneous reverse current at  
rated DC blocking voltage per leg (NOTE 2)  
T
C = 25°C  
1.0  
60  
IR  
mA  
TC = 125°C  
Notes: (1) 2.0µs pulse width, f = 1.0 KHZ  
(2) Pulse test: 300µs pulse width, 1% duty cycle  
Document Number 88790  
11-Dec-01  
www.vishay.com  
1
1

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