Datasheet > MBR30100CT-J

MBR30100CT-J

更新时间： 2024-01-22 04:01:48

品牌	Logo	应用领域
鲁光 - LGE		/
页数	文件大小	规格书
3页	1650K
描述
30A High Power Schottky Barrier Rectifiers

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中文翻译

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数据手册

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MBR30100CT-J 数据手册

MBR3040CT-J THRU MBR30200CT-J

30A High Power Schottky Barrier Rectifiers

■ Features

■ Outline

• Low power loss, high efficiency.

TO-220AB

• High current capability, low forward voltage drop.

• High surge capability.

• Guardring for overvoltage protection.

•Ultra high-speed switching.

0.420(10.66)

0.386(9.80)

0.197(5.0)MAX

0.055(1.40)

0.043(1.10)

•Silicon epitaxial planar chip, metal silicon junction. Suffix "H"

i•ndicates Halogen-free part, ex.MBR3040CTH-J. Lead-free

p• arts meet environmental standards of

MIL-STD-19500 /228

0.226(5.75)MIN

0.624(15.87)MAX

0.155(3.94)

MAX

Marking code

0.115(2.92)

0.081(2.05)

0.054(1.37)

MAX

0.038(0.96)

0.020(0.50)

0.500(12.70)MIN

■ Mechanical data

0.250(6.35)

MIN

• Epoxy : UL94-V0 rated flame retardant.

• Case : JEDEC TO-220AB molded plastic body over

passivated chip.

0.110(2.80)

0.091(2.30)

0.028(0.70)

0.011(0.28)

• Lead : Axial leads, solderable per MIL-STD-202,

Method 208 guranteed.

PIN 1

PIN 3

PIN 2

• Polarity: Color band denotes cathode end.

• Mounting Position : Any.

Dimensions in inches and (millimeters)

• Weight : Approximated 2.25 gram.

■ Maximum ratings and electrical characteristics

Rating at 25^OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Parameter

Conditions

Symbol

I_O

MIN.

TYP.

MAX.

UNIT

Forward rectified current

See Fig.1

8.3ms single half sine-wave superimposed on

rate load (JEDEC method)

Forward surge current

I_FSM

200

V_R= V_RRMT_A= 25^OC

V_R= V_RRMT_A= 125^OC

0.1

I_R

Reverse current

C_J

Diode junction capacitance

Thermal resistance

f=1MHz and applied 4V DC reverse voltage

Junction to ambient

150

^OC/W

^OC

R_θJA

T_STG

Storage temperature

-55

+175

Max.

RMS voltage

V_RMS(V)

Max. DC

blocking voltage

V_R(V)

Operating

temperature

T_J(^OC)

forward voltage

repetitive peak

reverse voltage

V_RRM(V)

Symbol

Marking code

@15A, T_A= 25^OC @15A, T_A= 125^OC

V_F(V)

MBR3040CT

MBR3045CT

MBR3060CT

MBR3065CT

MBR30100CT

MBR30150CT

MBR30200CT

31.5

MBR3040CT-J

MBR3045CT-J

MBR3060CT-J

MBR3065CT-J

MBR30100CT-J

MBR30150CT-J

MBR30200CT-J

0.70

0.57

-55 ~ +150

-55 ~ +175

0.79

0.70

45.5

100

150

200

100

150

200

0.81

0.87

0.90

0.71

0.77

0.80

105

140

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

12 3

中文翻译

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与MBR30100CT-J相关器件

型号	品牌	获取价格	描述	数据表
MBR30100CT-LJ	DIODES	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 100V V(RRM), Silicon, TO-220AB,
MBR30100CTR	THINKISEMI	获取价格	30.0 Amperes Heatsink Dual Common Anode Schottky Half Bridge Rectifiers
MBR30100CTS	YANGJIE	获取价格	TO-220AB
MBR30100CT-Y	TSC	获取价格	Dual Common Cathode Schottky Rectifier
MBR30100F	SECOS	获取价格	30Amp Schottky Barrier Rectifiers
MBR30100F-C	SECOS	获取价格	30Amp Schottky Barrier Rectifiers
MBR30100FCT	MCC	获取价格	30 Amp Schottky Barrier Rectifier 20 to 100 Volts
MBR30100FCT	PANJIT	获取价格	SCHOTTKY BARRIER RECTIFIERS
MBR30100FCT	SIRECT	获取价格	Power Schottky Rectifier - 30Amp 100Volt
MBR30100FCT	CTC	获取价格	SCHOTTKY BARRIER RECTIFIERS

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