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MBR2590CT PDF预览

MBR2590CT

更新时间: 2024-11-09 11:11:55
品牌 Logo 应用领域
强茂 - PANJIT /
页数 文件大小 规格书
2页 81K
描述
SCHOTTKY BARRIER RECTIFIERS

MBR2590CT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.38
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.8 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
最大非重复峰值正向电流:200 A元件数量:2
相数:1端子数量:3
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:20 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:90 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MBR2590CT 数据手册

 浏览型号MBR2590CT的Datasheet PDF文件第2页 
MBR2540CT~MBR25200CT  
SCHOTTKY BARRIER RECTIFIERS  
VOLTAGE 40 to 200 Volts  
CURRENT 25 Amperes  
FEATURES  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-O.  
Flame Retardant Epoxy Molding Compound.  
• Exceeds environmental standards of MIL-S-19500/228  
• Low power loss, high efficiency.  
• Low forwrd voltge, high current capability  
• High surge capacity.  
• For use in low voltage,high frequency inverters  
free wheeling , and polarlity protection applications.  
• In compliance with EU RoHS 2002/95/EC directives  
.058(1.47)  
.042(1.07)  
MECHANCEAL DATA  
• Case: TO-220AB Molded plastic  
Terminals: Solder plated, solderable per MIL-STD-750, Method 2026  
• Polarity: As marked.  
• Standard packaging: Any  
• Weight: 0.0655 ounces, 1.859grams.  
MAXIMUMRATINGSANDELECTRICALCHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
MBR2540CT MBR2545CT MBR2550CT MBR2560CT MBR2580CT MBR2590CT MBR25100CT MBR25150CT MBR25200CT  
PARAMETER  
SYMBOL  
VR R M  
UNITS  
V
Maximum Recurrent Peak Reverse Voltage  
40  
28  
40  
45  
31.5  
45  
50  
35  
50  
60  
42  
60  
80  
56  
80  
90  
63  
90  
100  
70  
150  
105  
150  
200  
140  
200  
Maximum RMS Voltage  
VR M  
V
V
A
A
V
S
Maximum DC Blocking Voltage  
Maximum Average Forward Current (See fig.1)  
VD  
100  
C
IF  
20  
( A V  
)
Peak Forward Surge Current :8.3ms single half sine-  
wave superimposed on rated load(JEDEC method)  
IF  
200  
S
M
Maximum Forward Voltage at 12.5A, per leg  
Maximum DC Reverse Current TJ=25 OC  
VF  
0.7  
0.75  
0.8  
0.9  
0.05  
20  
IR  
mA  
at Rated DC Blocking Voltage TJ=125O  
C
O C  
W
/
Typical Thermal Resistance  
RθJC  
2
O C  
-50 to  
+ 150  
Operating Junction and Storage Temperature Range  
TJ,TSTG  
-65 to +175  
NOTES:  
Both Bonding and Chip structure are available.  
PAGE . 1  
STAD-APR.30.2009  

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