MBR220-MBR2100
SCHOTTKY BARRIER RECTIFIER DIODES
VOLTAGE RANGE: 20 - 100V
CURRENT: 2.0 A
Features
!
!
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
High Current Capability
Low Power Loss, High Efficiency
High Surge Current Capability
!
!
!
A
B
A
!
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
C
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
Protection Applications
D
Mechanical Data
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!
Case: DO-15, Molded Plastic
DO-15
Min
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.40 grams (approx.)
Mounting Position: Any
Dim
A
Max
—
25.40
5.50
!
!
!
!
B
7.62
0.889
3.60
C
0.686
2.60
D
Marking: Type Number
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
TA = 25ꢀC unless otherwise specified
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
Characteristic
Symbol MBR220 MBR230 MBR240 MBR250 MBR260 MBR280 MBR2100 Unit
RRM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RWM
20
14
30
21
40
28
50
35
60
42
80
56
100
70
V
R
V
R(RMS)
RMS Reverse Voltage
V
V
A
Average Rectified Output Current @TL = 100°C
(Note 1)
O
I
2.0
50
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
FSM
I
A
FM
Forward Voltage
@IF = 2.0A
V
0.50
170
0.70
0.85
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
0.5
10
RM
I
mA
j
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 1)
Operating and Storage Temperature Range
C
140
pF
°C/W
°C
JA
ꢀ
R
35
j
STG
T, T
-65 to +150
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
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