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MBR2050CT-HE3/45

更新时间： 2024-11-19 05:02:51
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 502K
描述
DIODE 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

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MBR2050CT-HE3/45 数据手册

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MBR(F,B)2035CT thru MBR(F,B)2060CT  
Vishay General Semiconductor  
Dual Common-Cathode Schottky Rectifier  
FEATURES  
TO-220AB  
ITO-220AB  
• Guardring for overvoltage protection  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
• High frequency operation  
3
3
2
2
1
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C (for TO-263AB package)  
1
MBR20xxCT  
MBRF20xxCT  
PIN 1  
PIN 2  
CASE  
PIN 1  
PIN 2  
• Solder dip 260 °C, 40 s (for TO-220AB and  
ITO-220AB package)  
PIN 3  
PIN 3  
TO-263AB  
K
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
2
For use in low voltage, high frequency rectifier of  
switching mode power supplies, freewheeling diodes,  
dc-to-dc converters or polarity protection application.  
1
MBRB20xxCT  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
Case: TO-220AB, ITO-220AB, TO-263AB  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
PRIMARY CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
10 A x 2  
35 V to 60 V  
150 A  
0.57 V, 0.70 V  
150 °C  
VF  
TJ max.  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL MBR2035CT  
MBR2045CT  
MBR2050CT  
MBR2060CT  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
VRRM  
VRWM  
VDC  
35  
35  
35  
45  
45  
45  
50  
50  
50  
60  
60  
60  
V
V
V
Maximum DC blocking voltage  
Maximum average forward rectified total device  
20  
10  
IF(AV)  
IFSM  
IRRM  
A
A
A
current at TC = 135 °C  
per diode  
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load per diode  
150  
Peak repetitive reverse surge current per diode at  
tp = 2 µs, 1 kHz  
1.0  
0.5  
Voltage rate of change (rated VR)  
Operating junction temperature range  
Storage temperature range  
dV/dt  
TJ  
10 000  
V/µs  
°C  
- 65 to + 150  
- 65 to + 175  
TSTG  
°C  
Isolation voltage (ITO-220AB only)  
from terminal to heatsink t = 1 min  
VAC  
1500  
V
Document Number: 88674  
Revision: 08-Nov-07  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
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