Datasheet > MBR20100BCT

MBR20100BCT

更新时间： 2024-11-03 00:56:23

品牌	Logo	应用领域
鲁光 - LGE		/
页数	文件大小	规格书
3页	1631K
描述
20A Surface Mount High Power Schottky Barrier Rectifiers

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MBR20100BCT 数据手册

MBR2040BCT THRU MBR20200BCT

20A Surface Mount High Power Schottky Barrier Rectifiers

■ Features

■ Outline

D²PAK(TO-263)

• Low power loss, high efficiency.

• High current capability, low forward voltage drop.

• High surge capability.

• Guardring for overvoltage protection.

• Ultra high-speed switching.

•Silicon epitaxial planar chip, metal silicon junction.

•Suffix "H" indicates Halogen-free part, ex.MBR2040BCTH. Lead-

f•ree parts meet environmental standards of

MIL-STD-19500 /228

0.411(10.45)

0.380(9.65)

0.245(6.22)

MIN

0.055(1.40)

0.031(0.80)

0.190(4.83)

0.160(4.06)

0.055(1.40)

0.045(1.14)

0.370(9.40)

0.320(8.13)

Marking code

0~0.012(0~0.30)

0.110(2.79)

0.090(2.29)

0.228(5.80)

0.173(4.40)

■ Mechanical data

0.063(1.60)

0.024(0.60)

• Epoxy : UL94-V0 rated flame retardant.

• Case : Molded plastic, TO-263 / D²PAK

• Terminals : Solder plated, solderable per

MIL-STD-750, Method 2026

• Polarity: Indicated by cathode band.

• Mounting Position : Any.

0.024(0.60)

0.011(0.28)

0.205(5.20)

0.189(4.80)

PIN 1

PIN 3

PIN 2

Dimensions in inches and (millimeters)

• Weight : Approximated 1.70 gram.

■ Maximum ratings and electrical characteristics

Rating at 25^OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Parameter

Conditions

Symbol

I_O

MIN.

TYP.

MAX.

UNIT

Forward rectified current

See Fig.1

8.3ms single half sine-wave superimposed on

rate load (JEDEC method)

Forward surge current

I_FSM

150

V_R= V_RRMT_A= 25^OC

V_R= V_RRMT_A= 125^OC

0.1

I_R

Reverse current

C_J

Diode junction capacitance

Thermal resistance

f=1MHz and applied 4V DC reverse voltage

Junction to ambient

150

^OC/W

^OC

R_θJA

T_STG

Storage temperature

-55

+175

Max.

RMS voltage

V_RMS(V)

Max. DC

blocking voltage

V_R(V)

Operating

temperature

T_J(^OC)

forward voltage

repetitive peak

reverse voltage

V_RRM(V)

Symbol

Marking code

@10A, T_A= 25^OC @10A, T_A= 125^OC

V_F(V)

MBR2040CT

MBR2045CT

MBR2060CT

MBR2065CT

MBR20100CT

MBR20150CT

MBR20200CT

31.5

MBR2040BCT

MBR2045BCT

MBR2060BCT

MBR2065BCT

MBR20100BCT

MBR20150BCT

MBR20200BCT

0.70

0.57

-55 ~ +150

-55 ~ +175

0.79

0.70

45.5

100

150

200

100

150

200

0.81

0.87

0.90

0.71

0.77

0.80

105

140

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

12 3

中文翻译

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与MBR20100BCT相关器件

型号	品牌	获取价格	描述	数据表
MBR20100-BP	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 20A, 100V V(RRM), Silicon, TO-220AC, ROHS C
MBR20100C	DIODES	获取价格	HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR20100C	UTC	获取价格	SCHOTTKY BARRIER RECTIFIER
MBR20100C	BCDSEMI	获取价格	HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR20100C	RECTRON	获取价格	Reverse Voltage Vr : 100 V;Forward Current Io : 20.0 A;Max Surge Current : 130 A;Forward V
MBR20100C_12	UTC	获取价格	SCHOTTKY BARRIER RECTIFIER
MBR20100C_15	UTC	获取价格	SCHOTTKY BARRIER RECTIFIER
MBR20100CA	THINKISEMI	获取价格	20.0 Ampere Dual Common Anode Schottky Barrier Rectifiers
MBR20100CD	NIUHANG	获取价格	SCHOTTKY RECTIFIERS
MBR20100CD	MDD	获取价格	40 to 200 Volts Forward Current - 20.0 Amperes

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