Datasheet > MBR160F

MBR160F

更新时间： 2024-11-24 14:51:59

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	129K
描述
Rectifier device Schottky Diode

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中文翻译

获取价格

数据手册

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MBR160F 数据手册

MBR120F - MBR1100F

SURFACE MOUNT SCHOTTKY BARRIER DIODES

VOLTAGE RANGE: 20 - 100V

CURRENT: 1.0 A

Features

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

Metal silicon junction,majority carrier conduction

Low power loss,high efficiency

High forward surge current capability

High temperature soldering guaranteed:

250 C/10 seconds,0.37”5(9.5mm) lead length,

5 lbs. (2.3kg) tension

Mechanical Data

SMAF

Dim Min Max Typ

4.75 4.85

3.68 3.72

4.80

3.70

2.60

1.00

Case: SMAF,Molded Plastic

Terminals: Solder Plated, Solderable

2.57

2.63

0.097 1.03

per MIL-STD-750, Method 2026

Polarity:Color band denotes cathode end

Mounting Position:Any

1.38 1.42 1.40

0.13 0.17 0.15

0.63 0.67 0.65

All Dimensions in mm

Weight:0.0018 ounce, 0.064 grams

Maximum Ratings and Electrical Characteristics

T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Symbol

MBR1100F

MBR120F

MBR140F

MBR160F

Characteristic

Unit

Marking

R110

R12

R14

R16

Maximum repetitive peak reverse voltage

100

VRRM

Maximum RMS voltage

V_RMS

100

Maximum DC blocking voltage

Maximum average forward rectified current

VDC

I(AV)

IFSM

1.0

Peak forward surge current

25.0

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Maximum instantaneous forward voltage at 1.0A

0.55

0.70

0.85

5.0

Maximum DC reverse current

at rated DC blocking voltage

TA=25 C

0.5

TA=100 C

10.0

110

Typical junction capacitance (NOTE 1)

Operating junction temperature range

Storage temperature range

-65 to +125

-65 to +150

TSTG

-65 to +150

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

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