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MBR160RLG

更新时间： 2024-11-23 04:41:07
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安森美 - ONSEMI /
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5页 67K
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Axial Lead Rectifiers

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MBR160RLG 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：DO-41包装说明：O-PALF-W2
针数：2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：0.6其他特性：LOW POWER LOSS, FREE WHEELING DIODE
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：1 VJEDEC-95代码：DO-41
JESD-30 代码：O-PALF-W2JESD-609代码：e3
最大非重复峰值正向电流：25 A元件数量：1
端子数量：2最高工作温度：150 °C
最低工作温度：-65 °C最大输出电流：1 A
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：260
认证状态：Not Qualified最大重复峰值反向电压：60 V
子类别：Rectifier Diodes表面贴装：NO
技术：SCHOTTKY端子面层：Tin (Sn)
端子形式：WIRE端子位置：AXIAL
处于峰值回流温度下的最长时间：40Base Number Matches：1

MBR160RLG 数据手册

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MBR150, MBR160  
MBR160 is a Preferred Device  
Axial Lead Rectifiers  
The MBR150/160 series employs the Schottky Barrier principle in a  
large area metal−to−silicon power diode. State−of−the−art geometry  
features epitaxial construction with oxide passivation and metal  
overlap contact. Ideally suited for use as rectifiers in low−voltage,  
high−frequency inverters, free wheeling diodes, and polarity  
protection diodes.  
http://onsemi.com  
Features  
SCHOTTKY BARRIER  
RECTIFIERS  
1.0 AMPERE − 50 AND 60 VOLTS  
• Low Reverse Current  
• Low Stored Charge, Majority Carrier Conduction  
• Low Power Loss/High Efficiency  
• Highly Stable Oxide Passivated Junction  
• These are Pb−Free Devices*  
Mechanical Characteristics:  
• Case: Epoxy, Molded  
• Weight: 0.4 Gram (Approximately)  
• Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
• Lead Temperature for Soldering Purposes:  
DO−41  
AXIAL LEAD  
CASE 59  
260°C Max. for 10 Seconds  
• Polarity: Cathode Indicated by Polarity Band  
STYLE 1  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
V
V
RRM  
MBR150  
MBR160  
50  
60  
MARKING DIAGRAM  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
RWM  
V
R
RMS Reverse Voltage  
MBR150  
MBR160  
V
35  
42  
V
A
R(RMS)  
Average Rectified Forward Current (Note 1)  
I
1.0  
O
(V  
R
q
v 0.2 V (dc), T = 90°C,  
R(equiv)  
R
L
A
= 80°C/W, P.C. Board Mounting, T = 55°C)  
MBR1x0  
YYWW G  
G
JA  
A
Nonrepetitive Peak Surge Current  
(Surge applied at rated load conditions,  
halfwave, single phase, 60 Hz, T = 70°C)  
I
25  
(for one  
cycle)  
A
FSM  
L
Operating and Storage Junction Temperature  
Range (Reverse Voltage Applied)  
T , T  
− 65 to  
+150  
°C  
J
stg  
A
= Assembly Location  
THERMAL CHARACTERISTICS (Notes 1 and 2)  
MBR1x0 = Device Code  
x = 5 or 6  
Characteristic  
Symbol  
Max  
Unit  
Y
= Year  
= Work Week  
= Pb−Free Package  
Thermal Resistance, Junction−to−Ambient  
R
80  
°C/W  
q
JA  
WW  
G
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Lead Temperature reference is cathode lead 1/32″ from case.  
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 4 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
June, 2006 − Rev. 8  
MBR150/D  
 
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中文翻译

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MBR160RLG 替代型号

型号 品牌 替代类型 描述 数据表
MBR160RL ONSEMI

完全替代

 Axial Lead Rectifiers
MBR160G ONSEMI

完全替代

 Axial Lead Rectifiers
MBR160 ONSEMI

完全替代

 Axial Lead Rectifiers

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