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MBR1560CTHC0 PDF预览

MBR1560CTHC0

更新时间: 2024-11-28 01:08:55
品牌 Logo 应用领域
TSC 局域网功效瞄准线二极管
页数 文件大小 规格书
4页 212K
描述
Dual Common Cathode Schottky Rectifier

MBR1560CTHC0 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PSFM-T3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.24其他特性:LOW POWER LOSS
应用:EFFICIENCY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.75 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
最大非重复峰值正向电流:150 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:7.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
参考标准:AEC-Q101最大重复峰值反向电压:60 V
最大反向电流:300 µA子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

MBR1560CTHC0 数据手册

 浏览型号MBR1560CTHC0的Datasheet PDF文件第2页浏览型号MBR1560CTHC0的Datasheet PDF文件第3页浏览型号MBR1560CTHC0的Datasheet PDF文件第4页 
MBR1535CT thru MBR15150CT  
Taiwan Semiconductor  
CREAT BY ART  
Dual Common Cathode Schottky Rectifier  
FEATURES  
- Low power loss, high efficiency  
- Guardring for overvoltage protection  
- High surge current capability  
- Compliant to RoHS Directive 2011/65/EU and  
in accordance to WEEE 2002/96/EC  
- Halogen-free according to IEC 61249-2-21 definition  
TO-220AB  
MECHANICAL DATA  
Case: TO-220AB  
Molding compound, UL flammability classification rating 94V-0  
Base P/N with suffix "G" on packing code - halogen-free  
Base P/N with prefix "H" on packing code - AEC-Q101 qualified  
Terminal: Matte tin plated leads, solderable per JESD22-B102  
Meet JESD 201 class 1A whisker test,  
with prefix "H" on packing code meet JESD 201 class 2 whisker test  
Polarity: As marked  
Mounting torque: 5 in-lbs maximum  
Weight: 1.88 g (approximately)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)  
MBR  
MBR  
MBR  
MBR  
MBR  
MBR  
MBR  
PARAMETER  
SYMBOL 1535 1545 1550 1560 1590 15100 15150 UNIT  
CT  
35  
24  
35  
CT  
45  
31  
45  
CT  
50  
35  
50  
CT  
60  
42  
60  
15  
CT  
90  
63  
90  
CT  
100  
70  
CT  
150  
105  
150  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
V
V
V
A
Maximum DC blocking voltage  
100  
Maximum average forward rectified current  
IF(AV)  
Peak repetitive forward current  
(Rated VR, Square wave, 20KHz)  
IFRM  
15  
A
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
IRRM  
150  
A
A
Peak repetitive reverse surge current (Note 1)  
1
0.5  
Maximum instantaneous forward voltage (Note 2)  
IF=7.5A, TJ=25  
-
0.75  
0.92  
1.05  
IF=7.5A, TJ=125℃  
VF  
0.57  
0.84  
0.72  
0.65  
0.82  
V
0.92  
IF=15A, TJ=25℃  
-
-
-
-
-
-
IF=15A, TJ=125℃  
Maximum reverse current @ rated VR TJ=25 ℃  
TJ=125 ℃  
0.5  
10  
0.3  
7.5  
0.1  
5.0  
IR  
mA  
Voltage rate of change (Rated VR)  
Typical thermal resistance  
10000  
1.5  
dV/dt  
RθJC  
RθJA  
TJ  
V/μs  
OC/W  
10  
OC  
OC  
Operating junction temperature range  
Storage temperature range  
- 55 to +150  
- 55 to +150  
TSTG  
Note 1: tp = 2.0 μs, 1.0KHz  
Note 2: Pulse test with PW=300μs, 1% duty cycle  
Document Number: DS_D1308062  
Version: H13  

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