Datasheet > MBR1100_06

MBR1100_06

更新时间： 2024-10-02 04:41:07

品牌	Logo	应用领域
安森美 - ONSEMI		/
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4页	59K
描述
Axial Lead Rectifier

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MBR1100_06 数据手册

MBR1100

Preferred Device

Axial Lead Rectifier

These rectifiers employ the Schottky Barrier principle in a large area

metal−to−silicon power diode. State−of−the−art geometry features

epitaxial construction with oxide passivation and metal overlap

contact. Ideally suited for use as rectifiers in low−voltage,

high−frequency inverters, free wheeling diodes, and polarity

protection diodes.

http://onsemi.com

SCHOTTKY

Features

• Low Reverse Current

BARRIER RECTIFIER

1.0 AMPERE, 100 VOLTS

• Low Stored Charge, Majority Carrier Conduction

• Low Power Loss/High Efficiency

• Highly Stable Oxide Passivated Junction

• Guard−Ring for Stress Protection

• Low Forward Voltage

• 175°C Operating Junction Temperature

• High Surge Capacity

• These are Pb−Free Devices*

DO−41

AXIAL LEAD

CASE 59

Mechanical Characteristics:

• Case: Epoxy, Molded

• Weight: 0.4 Gram (Approximately)

STYLE 1

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

MARKING DIAGRAM

• Polarity: Cathode Indicated by Polarity Band

MBR1100

YYWW G

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

100

RRM

RWM

= Assembly Location

= Year

WW = Work Week

Average Rectified Forward Current

1.0

= Pb−Free Package

≤ 0.2 V (dc), R

= 50°C/W,

R(equiv)

(Note: Microdot may be in either location)

P.C. Board Mounting, [see Note 3], T = 120°C)

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions

Halfwave, Single Phase, 60 Hz)

FSM

ORDERING INFORMATION

†

Device

Package

Shipping

Operating and Storage Junction Temperature

Range (Note 1)

T , T

−65 to

+175

°C

stg

MBR1100

Axial Lead*

1000 Units/Bag

MBR1100G

Voltage Rate of Change (Rated V )

dv/dt

V/ns

MBR1100RL

Axial Lead* 5000/Tape & Reel

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

MBR1100RLG

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

1. The heat generated must be less than the thermal conductivity from

Junction−to−Ambient: dP /dT < 1/R .

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

June, 2006 − Rev. 6

MBR1100/D

12 3 4

中文翻译

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与MBR1100_06相关器件

型号	品牌	获取价格	描述	数据表
MBR1100_12	VISHAY	获取价格	Schottky Rectifier, 1 A
MBR11000	FCI-CONNECTOR	获取价格	Rectifier Diode, Schottky, 1 Element, 10A, 100V V(RRM),
MBR1100CT	GXELECTRONICS	获取价格	10.0AMPS. Schottky Barrier Rectifiers
MBR1100CT	PANJIT	获取价格	10 AMPERES SCHOTTKY BARRIER RECTIFIERS
MBR1100CT	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, Silicon, TO-220AB, PLASTIC PACKAGE-3
MBR1100CT-1	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, Silicon, TO-262AA, PLASTIC, TO-262, 3 P
MBR1100F	PACELEADER	获取价格	1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
MBR1100F	SUNMATE	获取价格	Rectifier device Schottky Diode
MBR1100FL	KEXIN	获取价格	Schottky Diodes
MBR1100G	ONSEMI	获取价格	Axial Lead Rectifier

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