Datasheet > MBR1100HT

MBR1100HT

更新时间： 2024-10-03 14:52:11

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
4页	245K
描述
肖特基二极管

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中文翻译

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数据手册

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MBR1100HT 数据手册

MBR120HT THRU MBR1200HT

Surface Mount Schottky Barrier Rectifiers

Reverse Voltage 20 to 200 V

PINNING

Forward Current 1 A

DESCRIPTION

Cathode

Anode

Top View

Simplified outline SOD-323HE and symbol

Absolute Maximum Ratings and Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive load.

For capacitive load, derate by 20%

MBR

Parameter

Symbols

V_RRM

Units

120HT 130HT 140HT 150HT 160HT 180HT 1100HT 1150HT 1200HT

100 150 200

70 105 140

100 150 200

Repetitive Peak Reverse Voltage

Maximum RMS Voltage

V_RMS

Maximum DC Blocking Voltage

Maximum Average Forward

V_DC

I_F(AV)

Rectified Current

T_C= 75℃

Peak Forward Surge Current

8.3 ms Single Half Sine

Wave Superimposed on Rated

Load(JEDEC methode)

I_FSM

Maximum Instantaneous at I_F= 0.7 A

0.48

0.55

V_F

Forward Voltage

at I_F= 1 A

0.7

0.85

0.9 0.92

Maximum Instantaneous

Reverse Current at

DC Blocking Voltage

T_j= 25℃

T_j= 125℃

I_R

0.02

Typical Junction Capacitance ¹⁾

Operating Junction Temperature Range

Storage Temperature Range

C_j

T_j

160

℃

- 55 to + 125

- 65 to + 150

T_stg

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

220

Unit

Thermal Resistance from

℃/W

Junction to Ambient

¹⁾Mearsured at 1 MHz and reverse voltage of 4 V.

²⁾8.0mm ²(.013mm thick) land areas.

1 / 4

Dated: 08/04/2022 Rev: 02

12 3 4

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