Datasheet > MBR1100HT-AH

MBR1100HT-AH

更新时间： 2024-10-03 14:54:23

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	162K
描述
肖特基二极管

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MBR1100HT-AH 数据手册

MBR1100HT-AH

Surface Mount Schottky Barrier Rectifier

Reverse Voltage at 100 V

Forward Current at 1 A

PINNING

DESCRIPTION

Cathode

Anode

Features

• AEC-Q101 Qualified

• Halogen and Antimony Free(HAF), RoHS compliant

Top View

Marking Code: DG1

Simplified outline SOD-323HE and symbol

Absolute Maximum Ratings and Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive load.

For capacitive load, derate by 20%

Parameter

Symbols

V_RRM

Value

100

Units

Repetitive Peak Reverse Voltage

100

Maximum RMS Voltage

V_RMS

V_DC

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current at T_c= 75℃

I_F(AV)

Peak Forward Surge Current 8.3 ms Single Half Sine

Wave Superimposed on Rated Load (JEDEC methode)

I_FSM

V_F

Maximum Instantaneous Forward Voltage at I_F= 1 A

0.85

at T_a= 25℃

at T_a= 125℃

Maximum Instantaneous Reverse Current

at DC Blocking Voltage

0.02

I_R

Typical Junction Capacitance ¹⁾

C_j

160

220

Typical Thermal Resistance, Junction to Ambient ²⁾

Operating Junction Temperature Range

Storage Temperature Range

R_θJA

℃/W

℃

T_j

- 55 to + 150

- 65 to + 150

T_stg

¹⁾Mearsured at 1 MHz and reverse voltage of 4 V.

²⁾8.0mm ²(.013mm thick) land areas.

1 / 3

Dated: 04/12/2020 MKH4 Rev : 01

12 3

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