MBR1060

更新时间： 2024-09-26 22:46:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
3页	48K
描述
10 Ampere Schottky Barrier Rectifiers

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

MBR1060 数据手册

MBR1035 - MBR1060

.412(10.5)

.185(4.70)

.175(4.44)

DIA

Features

MAX

.154(3.91)

.148(3.74)

.055(1.40)

.045(1.14)

• Low power loss, high efficiency.

• High surge capacity.

• For use in low voltage, high frequency

inverters, free wheeling, and polarity

protection applications.

.113(2.87)

.103(2.62)

.27(6.86)

.23(5.84)

.594(15.1)

.587(14.91)

Dimensions

are in:

inches (mm)

.16(4.06)

.14(3.56)

• Metal silicon junction, majority carrier

conduction.

.11(2.79)

.10(2.54)

.56(14.22)

.53(13.46)

• High current capacity, low forward

voltage drop.

.037(0.94)

.027(0.68)

• Guard ring for over voltage protection.

TO-220AC

PIN 1 +

.205(5.20)

.195(4.95)

.025(0.64)

.014(0.35)

CASE

PIN 2 -

CASE Positive

10 Ampere Schottky Barrier Rectifiers

Absolute Maximum Ratings*

T_A= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

I_O

i_{f(repetitive)}

Average Rectified Current

Peak Repetitive Forward Current

(Rated V_R, Square Wave, 20 KHz) @ T_A= 135°C

Peak Forward Surge Current

i_f(surge)

8.3 ms single half-sine-wave

150

Superimposed on rated load (JEDEC method)

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient

2.0

16.6

mW/°C

°C/W

R_θJA

R_θJL

T_stg

T_J

Thermal Resistance, Junction to Lead

Storage Temperature Range

2.0

°C/W

°C

-65 to +175

-65 to +150

Operating Junction Temperature

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics

T_A= 25°C unless otherwise noted

Parameter

Device

Units

1035

1045

1050

1060

Peak Repetitive Reverse Voltage

Maximum RMS Voltage

DC Reverse Voltage

(Rated V_R)

10,000

V/uS

Voltage Rate of Change (Rated V_R)

Maximum Reverse Current

0.1

@ rated V_R

T_A= 25°C

T_A= 125°C

Maximum Forward Voltage

_{F =}10 A, T_C= 25°C

0.80

0.70

0.95

0.85

0.57

0.84

0.72

I_{F =}10 A, T_C= 125°C

I_{F =}20 A, T_C= 25°C

I_{F =}20 A, T_C= 125°C

Peak Repetitive Reverse Surge

Current

1.0

0.5

2.0 us Pulse Width, f = 1.0 KHz

MBR1035 - MBR1060, Rev. A

1999 Fairchild Semiconductor Corporation

12 3

中文翻译

下载PDF

MBR1060 替代型号

型号	品牌	替代类型	描述	数据表
MBR760-E3/45	VISHAY	功能相似	DIODE SCHOTTKY 60V 7.5A TO220AC
MBR1060G	ONSEMI	功能相似	SWITCHMODE Power Rectifiers

与MBR1060相关器件

型号	品牌	获取价格	描述	数据表
MBR1060/45	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 10A, 60V V(RRM),
MBR1060-5410HE3/45	VISHAY	获取价格	DIODE SCHOTTKY ARRAY TO220AC
MBR1060BCT	LGE	获取价格	10A Surface Mount High Power Schottky Barrier Rectifiers
MBR1060C	UTC	获取价格	SCHOTTKY BARRIER RECTIFIER DIODES
MBR1060C	BCDSEMI	获取价格	HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR1060C	RECTRON	获取价格	Reverse Voltage Vr : 60 V;Forward Current Io : 10.0 A;Max Surge Current : 100 A;Forward Vo
MBR1060C_08	UTC	获取价格	SCHOTTKY BARRIER RECTIFIER DIODES
MBR1060C_15	UTC	获取价格	SCHOTTKY BARRIER RECTIFIER DIODES
MBR1060C0	TSC	获取价格	Schottky Barrier Rectifier
MBR1060C0G	TSC	获取价格	Schottky Barrier Rectifier

与MBR1060相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

19
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

15
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

18
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

28

产品中心

服务支持

精选活动

关于我们

帮助中心

MBR1060

MBR1060 数据手册

MBR1060 替代型号

与MBR1060相关器件

与MBR1060相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MBR1060

MBR1060 数据手册

MBR1060 替代型号

与MBR1060相关器件

与MBR1060相关文章

您还可以找

您在本页遇到什么问题？