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MBR10150CTF PDF预览

MBR10150CTF

更新时间: 2024-11-26 02:49:55
品牌 Logo 应用领域
时科 - SHIKUES /
页数 文件大小 规格书
3页 371K
描述
SCHOTTKY BARRIER RECTIFIERS

MBR10150CTF 数据手册

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MBR1040CT/TF THRU MBR10200CT/TF  
SCHOTTKY BARRIER RECTIFIERS  
Reverse Voltage - 40 to 200 V  
Forward Current - 10 A  
FEATURES  
• High current capability  
• Low forward voltage drop  
• Low power loss, high efficiency  
• High surge capability  
A1  
A1  
K
A2  
K
A2  
• High temperature soldering guaranteed  
• Mounting position: any  
Mechanical data  
• Case: TO-220  
• Approx. Weight: 1.9g ( 0.067oz)  
• Case: TO-220F  
TO-220F  
TO-220  
A1  
A2  
K
• Approx. Weight: 2.1g ( 0.07oz)  
• Terminals: Lead solderable per MIL-STD-202, Method 208  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25ambient temperature unless otherwise specified  
MBR1040CT  
MBR1045CT  
MBR1060CT  
MBR10100CT MBR10150CT MBR10200CT  
TO-220  
CHARACTERISTICS  
Units  
TO-220F  
MBR1040CTF MBR1045CTF MBR1060CTF MBR10100CTF MBR10150CTF MBR10200CTF  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
40  
28  
40  
45  
31.5  
45  
60  
42  
60  
100  
70  
150  
105  
150  
200  
140  
200  
V
V
V
A
Maximum DC Blocking Voltage  
100  
Per diode  
Per device  
5
10  
Maximum Average Forward  
Rectified Current  
IF(AV)  
Peak Forward Surge Current,8.3ms  
Single Half Sine-wave Superimposed  
on Rated Load (JEDEC method) per diode  
IFSM  
100  
A
Max Instantaneous  
VF  
IR  
0.70  
600  
0.75  
0.85  
0.90  
0.92  
V
Forward Voltage at 5 A(per diode)  
Ta = 25°C  
Maximum DC Reverse Current  
at Rated DC Reverse Voltage  
0.1  
20  
0.05  
20  
mA  
pF  
Ta =125°C  
Typical Junction Capacitance1)  
Typical Thermal Resistance2)  
400  
Cj  
°C/W  
°C  
RθJA  
Tj  
45  
Operating Junction Temperature Range  
Storage Temperature Range  
-55 ~ +150  
-55 ~ +150  
-55 ~ +175  
-55 ~ +175  
Tstg  
°C  
1Measured at 1 MHz and applied reverse voltage of 4 V D.C  
2P.C.B. mounted with 10cmX10cmX1mm copper pad areas.  
REV.08  
1 of 3  

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