Datasheet > MBR10150CTR

MBR10150CTR

更新时间： 2022-02-26 11:52:52

品牌	Logo	应用领域
THINKISEMI		/
页数	文件大小	规格书
2页	848K
描述
10 Ampere Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBR10150CTR 数据手册

MBR10100CTR thru MBR10200CTR

MBR10100CTR/MBR10150CTR/MBR10200CTR

Pb Free Plating Product

10 Ampere Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers

Unit : inch (mm)

TO-220AB

Features

.419(10.66)

.387(9.85)

.196(5.00)

.163(4.16)

ꢀ HMBR matured technology with high reliablity

.139(3.55)

MIN

.054(1.39)

.045(1.15)

ꢀ Low forward voltage drop

ꢀ High current capability

ꢀ Low reverse leakage current

ꢀ High surge current capability

Application

Automotive Inverters/Solar Inverters

ꢀ

Plating Power Supply,SMPS and UPS

Car Audio Amplifiers and Sound Device Systems

.038(0.96)

.019(0.50)

.025(0.65)MAX

Mechanical Data

ꢀ Case: Heatsink TO-220AB

.1(2.54)

ꢀ Epoxy: UL 94V-0 rate flame retardant

ꢀ

method 208

Terminals: Solderable per MIL-STD-202

ꢀ Polarity: As marked on diode body

ꢀ Mounting position: Any

ꢀ Weight: 2.0 gram approximately

Case

Doubler

Series

Negative

Positive

Common Cathode Common Anode Tandem Polarity Tandem Polarity

Suffix "CTD" Suffix "CTS"

Suffix "CT"

Suffix "CTR"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

PARAMETER

SYMBOL

UNIT

MBR10100CTR MBR10150CTR MBR10200CTR

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

150

105

150

200

140

200

Maximum DC blocking voltage

100

Maximum average forward rectified current

I_F(AV)

Peak repetitive forward current

(Rated VR, Square Wave, 20KHz)

I_FRM

Peak forward surge current, 8.3 ms single half

sine-wave superimposed on rated load

I_FSM

I_RRM

120

Peak repetitive reverse surge current (Note 1)

1.0

0.5

Maximum instantaneous forward voltage (Note 2)

I_F= 5A, T_J=25℃

0.85

0.75

0.95

0.85

0.88

0.75

0.97

0.85

I_F= 5A, T_J=125℃

V_F

I_F=10A, T_J=25℃

I_F=10A, T_J=125℃

Maximum reverse current @ rated VR

T_J=25 ℃

I_R

μA

T_J=125 ℃

Voltage rate of change (Rated V_R)

Typical thermal resistance

10000

1.5

dV/dt

R_θJC

T_J

V/μs

C/W

Operating junction temperature range

Storage temperature range

- 55 to +175

T_STG

Note 1: tp = 2.0 μs, 1.0KHz

Note 2: Pulse test with PW=300μs, 1% duty cycle

Rev.07C

Page 1/2

http://www.thinkisemi.com/

下载PDF

与MBR10150CTR相关器件

型号	品牌	描述	获取价格	数据表
MBR10150CTS	YANGJIE	TO-220AB	获取价格
MBR10150CT-Y	TSC	Dual Common Cathode Schottky Rectifier	获取价格
MBR10150D1	SECOS	10.0 Amp Schottky Barrier Rectifiers	获取价格
MBR10150D1-C	SECOS	10.0 Amp Schottky Barrier Rectifiers	获取价格
MBR10150DC	PANJIT	D2PAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS	获取价格
MBR10150DCT	NIUHANG	SCHOTTKY RECTIFIERS	获取价格