Datasheet > MBR10100C_11

MBR10100C_11

更新时间： 2024-11-17 12:20:43

品牌	Logo	应用领域
BCDSEMI		高压高电压电源
页数	文件大小	规格书
10页	442K
描述
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

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MBR10100C_11 数据手册

Data Sheet

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

MBR10100C

General Description

Main Product Characteristics

High voltage dual Schottky rectifier suited for switch

mode power supplies and other power converters.

This device is intended for use in medium voltage

operation, and particularly, in high frequency circuits

where low switching losses and low noise are

required.

I_F(AV)

V_RRM

T_J

2×5A

100V

150°C

V_F(max)

0.75V

The MBR10100C is available in standard TO-220-3,

TO-220-3 (2) and TO-220F-3 packages.

Mechanical Characteristics

•

Case: Epoxy, Molded

Epoxy Meets UL 94V-0 @ 0.125in.

Weight (Approximately):

Features

1.9Grams (TO-220-3, TO-220-3 (2) and

TO-220F-3)

Finish: All External Surfaces Corrosion

Resistant and Terminal

Leads are Readily Solderable

Lead Temperature for Soldering Purposes:

260°C Maximum for 10 Seconds

•

High Surge Capacity

150°C Operating Junction Temperature

10A Total (5A Per Diode Leg)

Guard-ring for Stress Protection

Pb-free Packages are available

•

Applications

•

Power Supply Output Rectification

Power Management

Instrumentation

TO-220F-3

TO-220-3 (Optional)

TO-220-3 (2)

Figure 1. Package Types of MBR10100C

Mar. 2011 Rev. 1. 3

BCD Semiconductor Manufacturing Limited

12 3 4 5 6 7...10

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