MBR1035CA thru MBR10200CA
CREAT BY ART
Pb
MBR1035CA thru MBR10200CA
Pb Free Plating Product
10.0 Ampere Dual Common Anode Schottky Barrier Rectifier Diodes
Unit : inch (mm)
TO-220AB
Features
.419(10.66)
.387(9.85)
.196(5.00)
.163(4.16)
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
.139(3.55)
MIN
.054(1.39)
.045(1.15)
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Guard-ring for overvoltage protection
High temperature soldering guaranteed:
260℃/10 seconds, 0.25"(6.35mm) from case
.038(0.96)
.019(0.50)
.025(0.65)MAX
.1(2.54)
.1(2.54)
Mechanical Data
Cases: JEDEC TO-220AB molded plastic body
Terminals: Pure tin plated, lead free, solderable
per MIL-STD-750, Method 2026
Polarity: As marked
Case
Case
Mounting position:Any
Negative
Common Anode
Suffix "CA"
Positive
Mounting torque: 5 in. - lbs, max
Weight: 2.0 gram approximately
Common Cathode
Suffix "CT"
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MBR MBR MBR MBR MBR MBR MBR MBR
Symbol 1035 1045 1050 1060 1090 10100 10150 10200 Units
Type Number
CA
CA
CA
CA
CA
CA
CA
CA
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
35
45
50
60
90
100
150
200
V
V
V
24
35
31
45
35
50
42
60
63
90
70
105
150
140
200
Maximum DC Blocking Voltage
100
IF(AV)
Maximum Average Forward Rectified Current
10
10
A
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20KHz)
IFRM
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
IFSM
IRRM
120
A
A
Peak Repetitive Reverse Surge Current (Note 1)
1.0
0.5
Maximum Instantaneous Forward Voltage at (Note 2)
IF=5A, TA=25℃
0.70
0.57
0.80
0.67
0.80
0.65
0.90
0.75
0.85
0.75
0.95
0.85
0.88
0.78
0.98
0.88
IF=5A, TA=125℃
VF
V
IF=10A, TA=25℃
IF=10A, TA=125℃
0.1
Maximum Instantaneous Reverse Current @ T A=25 ℃
mA
mA
IR
at Rated DC Blocking Voltage
@ T A=125 ℃
15
10
2
5
Voltage Rate of Change (Rated VR)
Maximum Typical Thermal Resistance
Operating Junction Temperature Range
Storage Temperature Range
10,000
1.5
dV/dt
RθJC
TJ
V/us
℃
/W
- 65 to + 150
- 65 to + 175
℃
℃
TSTG
Note 1: 2.0uS Pulse Width, f=1.0KHz
Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle
Page 1/2
http://www.thinkisemi.com/
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.