Datasheet > MBR0550-N

MBR0550-N

更新时间： 2024-02-11 19:16:03

品牌	Logo	应用领域
美丽微 - FORMOSA		二极管
页数	文件大小	规格书
2页	83K
描述
Chip Schottky Barrier Diodes - Silicon epitaxial planer type

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中文翻译

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数据手册

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MBR0550-N 数据手册

Chip Schottky Barrier Diodes

Formosa MS

MBR0520-N THRU MBR0560-N

Silicon epitaxial planer type

Features

SOD-323

Plastic package has Underwriters Laboratory

FlammabilityClassification 94V-O Utilizing Flame

RetardantEpoxy Molding Compound.

0.106 (2.7)

0.090 (2.3)

0.012(0.3) Typ.

For surface mounted applications.

0.053 (1.35)

0.045 (1.15)

Exceeds environmental standards of MIL-S-19500 /

228

Low leakage current.

0.044 (1.1)

0.035 (0.9)

0.035(0.9) Typ.

Dimensions in inches and (millimeters)

Mechanical data

Case : Molded plastic, JEDECSOD-323

Terminals : Solder plated, solderable per MIL-STD-750,

Method 2026

Polarity : Indicated by c athode band

Mounting Position : Any

Weight : 0.04 gram

MAXIMUM RATINGS (AT T_A=25 C unless otherwise noted)

PARAMETER

CONDITIONS

Symbol

I_O

MIN.

TYP.

MAX.

0.5

UNIT

Forward rectified current

See Fig.1

8.3ms single half sine-wave superimposed on

rate load (JEDEC methode)

Forward surge current

I_FSM

V_R= V_RRMT_A= 25 C

0.5

Reverse current

I_R

V_R= V_RRMT_A= 125 C

Thermal resistance

Junction to ambient

Rq_JC

C_J

C / w

Diode junction capacitance

Storage temperature

f=1MHz and applied 4vDC reverse voltage

120

T_STG

-55

+150

Operating

V_RRM

V_RMS

V_R

V_F

MARKING

temperature

SYMBOLS

CODE

( C)

(V)

MBR0520-N

MBR0530-N

MBR0540-N

MBR0550-N

MBR0560-N

0.40

0.45

-55 to +125

*1 Repetitive peak reverse voltage

*2 RMS voltage

*3 Continuous reverse voltage

*4 Maximum forward voltage

0.65

-55 to +150

中文翻译

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