5秒后页面跳转
MBR0560-M PDF预览

MBR0560-M

更新时间: 2024-11-17 22:46:23
品牌 Logo 应用领域
美丽微 - FORMOSA 二极管
页数 文件大小 规格书
2页 84K
描述
Chip Schottky Barrier Diodes - Silicon epitaxial planer type

MBR0560-M 数据手册

 浏览型号MBR0560-M的Datasheet PDF文件第2页 
Chip Schottky Barrier Diodes  
Formosa MS  
MBR0520-M THRU MBR05100-M  
Silicon epitaxial planer type  
Features  
SOD-123  
Plastic package has Underwriters Laboratory  
0.161(4.1)  
0.146(3.7)  
FlammabilityClassification 94V-O Utilizing Flame  
0.012(0.3) Typ.  
RetardantEpoxy Molding Compound.  
For surface mounted applications.  
0.071(1.8)  
0.055(1.4)  
Exceeds environmental standards of MIL-S-19500 /  
228  
0.126(3.2)  
0.110(2.8)  
Low leakage current.  
0.063(1.6)  
0.055(1.4)  
0.035(0.9) Typ.  
0.035(0.9) Typ.  
Dimensions in inches and (millimeters)  
Mechanical data  
Case : Molded plastic, JEDECSOD-123 / MINISMA  
Terminals : Solder plated, solderable per MIL-STD-750,  
Method 2026  
Polarity : Indicated by cathode band  
Mounting Position : Any  
Weight : 0.04 gram  
o
MAXIMUM RATINGS (AT TA=25 C unless otherwise noted)  
PARAMETER  
CONDITIONS  
Symbol  
IO  
MIN.  
TYP.  
MAX.  
0.5  
UNIT  
A
Forward rectified current  
See Fig.1  
8.3ms single half sine-wave superimposed on  
rate load (JEDEC methode)  
Forward surge current  
IFSM  
15  
A
o
VR = VRRM TA = 25 C  
0.5  
10  
mA  
mA  
Reverse current  
IR  
o
VR = VRRM TA = 125 C  
o
Thermal resistance  
Junction to ambient  
RqJC  
CJ  
98  
C / w  
pF  
Diode junction capacitance  
Storage temperature  
f=1MHz and applied 4vDC reverse voltage  
120  
o
TSTG  
-55  
+150  
C
Operating  
*1  
*2  
*3  
*4  
VRRM  
VRMS  
VR  
VF  
MARKING  
temperature  
SYMBOLS  
CODE  
o
( C)  
(V)  
(V)  
(V)  
(V)  
MBR0520-M  
MBR0530-M  
MBR0540-M  
MBR0550-M  
MBR0560-M  
MBR0580-M  
MBR05100-M  
02  
03  
04  
05  
06  
08  
01  
20  
30  
40  
50  
60  
80  
100  
14  
21  
28  
35  
42  
56  
70  
20  
30  
40  
50  
60  
80  
100  
0.45  
-55 to +125  
*1 Repetitive peak reverse voltage  
*2 RMS voltage  
0.65  
*3 Continuous reverse voltage  
*4 Maximum forward voltage  
-55 to +150  
0.80  

与MBR0560-M相关器件

型号 品牌 获取价格 描述 数据表
MBR0560-N FORMOSA

获取价格

Chip Schottky Barrier Diodes - Silicon epitaxial planer type
MBR0560S GOOD-ARK

获取价格

肖特基 (
MBR0560-T MCC

获取价格

Rectifier Diode,
MBR0560-TP MCC

获取价格

0.5 Amp Schottky Rectifier 20 to 80 Volts
MBR0560-TP-HF MCC

获取价格

Rectifier Diode, Schottky, 1 Element, 0.5A, 60V V(RRM), Silicon,
MBR0560WX RECTRON

获取价格

Reverse Voltage Vr : 60 V;Max Surge Current : 5.0 A;Forward Voltage Vf : 0.70 V;Reverse Cu
MBR0580 LUNSURE

获取价格

0.5Amp schottky rectifier 20to100 volts
MBR0580 MCC

获取价格

0.5 Amp Schottky Rectifier 20 to 100 Volts
MBR0580 GXELECTRONICS

获取价格

0.5 Amp Schottky Rectifier 20 to 80 Volts
MBR0580 CJ

获取价格

SOD-123