Datasheet > MBM29DL161BE12TR

MBM29DL161BE12TR

更新时间： 2024-11-24 03:45:31

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		光电二极管
页数	文件大小	规格书
75页	1089K
描述
Flash, 1MX16, 120ns, PDSO48

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中文翻译

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数据手册

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MBM29DL161BE12TR 数据手册

FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-20880-1E

FLASH MEMORY

CMOS

16M (2M × 8/1M × 16) BIT ^{Dual Operation}

MBM29DL16XTE/BE^-70/90/12

■ FEATURES

• 0.23 µm Process Technology

• Simultaneous Read/Write operations (dual bank)

Multiple devices available with different bank sizes (Refer to Table 1)

Host system can program or erase in one bank, then immediately and simultaneously read from the other bank

Zero latency between read and write operations

Read-while-erase

Read-while-program

• Single 3.0 V read, program, and erase

Minimizes system level power requirements

(Continued)

■ PRODUCT LINE UP

Part No.

V^CC= 3.3 V

MBM29DL16XTE/BE

+0.3 V

–0.3 V

—

Ordering Part No.

+0.6 V

–0.3 V

V^CC= 3.0 V

—

120

Max. Address Access Time (ns)

Max. CE Access Time (ns)

Max. OE Access Time (ns)

■ PACKAGES

48-pin plastic TSOP (I)

48-pin plastic FBGA

Marking Side

(FPT-48P-M20)

(FPT-48P-M19)

(BGA-48P-M11)

12 3 4 5 6 7...75

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与MBM29DL161BE12TR相关器件

型号	品牌	获取价格	描述	数据表
MBM29DL161BE-12TR	FUJITSU	获取价格	Flash, 1MX16, 12ns, PDSO48, PLASTIC, REVERSE, TSOP1-48
MBM29DL161BE-70	FUJITSU	获取价格	16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL161BE70PBT	FUJITSU	获取价格	16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL161BE-70PBT	SPANSION	获取价格	FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL161BE-70PBT-E1	SPANSION	获取价格	Flash, 1MX16, 70ns, PBGA48, PLASTIC, FBGA-48
MBM29DL161BE70PFTN	FUJITSU	获取价格	16M (2M x 8/1M x 16) BIT Dual Operation
MBM29DL161BE70PFTR	FUJITSU	获取价格	16M (2M x 8/1M x 16) BIT Dual Operation
MBM29DL161BE70TN	FUJITSU	获取价格	16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL161BE-70TN	SPANSION	获取价格	FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL161BE-70TN-E1	SPANSION	获取价格	Flash, 1MX16, 70ns, PDSO48, PLASTIC, TSOP1-48