5秒后页面跳转
MBM29DL161BE-70TR PDF预览

MBM29DL161BE-70TR

更新时间: 2024-11-20 02:54:07
品牌 Logo 应用领域
飞索 - SPANSION 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
76页 1048K
描述
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation

MBM29DL161BE-70TR 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TSOP1包装说明:TSOP1-R, TSSOP48,.8,20
针数:48Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.21Is Samacsys:N
最长访问时间:70 ns备用内存宽度:8
启动块:BOTTOM命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:R-PDSO-G48JESD-609代码:e0
长度:18.4 mm内存密度:16777216 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:8,31
端子数量:48字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:1MX16封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1-R封装等效代码:TSSOP48,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):240
电源:3/3.3 V编程电压:3 V
认证状态:Not Qualified就绪/忙碌:YES
反向引出线:YES座面最大高度:1.2 mm
部门规模:8K,64K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.05 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN LEAD端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30切换位:YES
类型:NOR TYPE宽度:12 mm
Base Number Matches:1

MBM29DL161BE-70TR 数据手册

 浏览型号MBM29DL161BE-70TR的Datasheet PDF文件第2页浏览型号MBM29DL161BE-70TR的Datasheet PDF文件第3页浏览型号MBM29DL161BE-70TR的Datasheet PDF文件第4页浏览型号MBM29DL161BE-70TR的Datasheet PDF文件第5页浏览型号MBM29DL161BE-70TR的Datasheet PDF文件第6页浏览型号MBM29DL161BE-70TR的Datasheet PDF文件第7页 
FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-20880-4E  
FLASH MEMORY  
CMOS  
16M (2M × 8/1M × 16) BIT Dual Operation  
MBM29DL16XTE/BE70/90  
FEATURES  
• 0.23 µm Process Technology  
• Simultaneous Read/Write operations (dual bank)  
Multiple devices available with different bank sizes  
(Refer to “MBM29DL16XTE/BE Device Bank Divisions Table” in GENERAL DESCRIPTION)  
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank  
Zero latency between read and write operations  
Read-while-erase  
Read-while-program  
(Continued)  
PRODUCT LINE UP  
Part No.  
Address Access Time (Max)  
CE Access Time (Max)  
OE Access Time (Max)  
Power Supply Voltage  
MBM29DL16XTE/BE70  
MBM29DL16XTE/BE90  
70 ns  
70 ns  
30 ns  
90 ns  
90 ns  
35 ns  
+0.6V  
3.0 V  
0.3V  
PACKAGES  
48-pin plastic TSOP (1)  
48-pin plastic TSOP (1)  
48-pin plastic FBGA  
Marking Side  
Marking Side  
(FPT-48P-M20)  
(FPT-48P-M19)  
(BGA-48P-M11)  

与MBM29DL161BE-70TR相关器件

型号 品牌 获取价格 描述 数据表
MBM29DL161BE-70TR-E1 SPANSION

获取价格

Flash, 1MX16, 70ns, PDSO48, PLASTIC, REVERSE, TSOP1-48
MBM29DL161BE-90 FUJITSU

获取价格

16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL161BE-90PBT SPANSION

获取价格

FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL161BE-90TN SPANSION

获取价格

FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL161BE-90TN-E1 SPANSION

获取价格

Flash, 1MX16, 90ns, PDSO48, PLASTIC, TSOP1-48
MBM29DL161BE-90TR SPANSION

获取价格

FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL161BE-90TR FUJITSU

获取价格

Flash, 1MX16, 90ns, PDSO48, PLASTIC, REVERSE, TSOP1-48
MBM29DL161BE-90TR-E1 SPANSION

获取价格

Flash, 1MX16, 90ns, PDSO48, PLASTIC, REVERSE, TSOP1-48
MBM29DL161TD FUJITSU

获取价格

16M (2M x 8/1M x 16) BIT Dual Operation
MBM29DL161TD12PBT FUJITSU

获取价格

1MX16 FLASH 3V PROM, 120ns, PBGA48, PLASTIC, FBGA-48