IGBT MODULE
Spec.No.IGBT-SP-06008 R5 P1
MBL400E33D
Silicon N-channel IGBT
FEATURES
∗ High thermal fatigue durability.(delta Tc=70oC, N>30,000cycles)
∗ High speed, low loss IGBT module.
∗ Low noise due to built-in free-wheeling diode
– ultra soft fast recovery diode(USFD).
∗ Low driving power due to low input capacitance MOS gate.
∗ High reliability, high durability module.
∗ Isolated heat sink (terminal to base).
ABSOLUTE MAXIMUM RATINGS (TC C)
=25o
Item
Symbol
Unit
MBL400E33D
Collector Emitter Voltage
Gate Emitter Voltage
VCES
VGES
IC
ICp
IF
IFM
Tj
Tstg
VISO
-
V
V
3,300
±20
400
800
400
800
DC
1ms
DC
1ms
Collector Current
A
Forward Current
A
oC
oC
Junction Temperature
Storage Temperature
Isolation Voltage
-40 ~ +125
-40 ~ +125
6,000(AC 1 minute)
VRMS
Terminals (M4/M8)
Mounting (M6)
2/22
6
(1)
(2)
Screw Torque
N·m
-
Notes: (1) Recommended Value 1.8±0.2/22±1N·m
(2) Recommended Value 5.5±0.5N·m
ELECTRICAL CHARECTERISTICS
1) IGBT + FWD
Item
Symbol Unit Min. Typ. Max.
Test Conditions
=25oC
=25oC
=125oC
=400mA, T
=25oC
CE=10V, VGE=0V,f=100kHz, T
CC=1,650V, I =400A
Collector Emitter Cut-Off Current
Gate Emitter Leakage Current
Collector Emitter Saturation Voltage
Gate Emitter Threshold Voltage
Input Capacitance
Internal Gate Resistance
Rise Time
I
I
CES
GES
mA
nA
V
V
nF
ꢀ
-
-
-
-
12.0
500 VGE
5.0
7.0
-
V
CE=3,300V, VGE=0V, T
20V, VCE=0V, T
=400A, VGE=15V, T
CE=10V, I
j
=
j
V
V
CE(sat)
3.5
4.5
-
4.2
6.0
35
3.6
1.9
2.4
1.0
3.0
2.5
I
C
j
GE(TO)
V
V
V
C
j
C
R
ies
ge
j
=25oC
-
-
t
r
1.0
1.5
0.5
2.0
2.0
3.1
3.3
2.5
5.1
C
L=150nH
=10Ω (3)
GE=±15V, T
=125oC
=400A, VGE=0V, Tj=125oC
CC=1,650V, I =400A (4)
=125oC
Turn On Time
Fall Time
Turn Off Time
t
on
Switching Times
µs
RG
tf
off
V
j
t
Peak Forward Voltage Drop
V
FM
V
3.0 -IC
V
F
Reverse Recovery Time
t
rr
µs
-
0.6
-
L=150nH, T
j
IGBT
Thermal Impedance
FWD
Rth(j-c)
Rth(j-c)
-
-
-
-
0.026
0.052
K/W
Junction to case
2) DIODE
Item
Symbol Unit Min. Typ. Max.
Test Conditions
=25oC
=400A, Tj
=125oC At Main terminal
I
AKS
mA
-
-
12.0
Collector Emitter Cut-Off Current
VAK=3,300V, Tj
I
F
V
F
V
2.2
2.7
3.2
Peak Forward Voltage Drop
(Terminal resistance:0.5m
Ω typical)
I
F
=400A, VCC=1,650V (4)
Reverse Recovery Time
Thermal Impedance
t
rr
0.2
0.6
1.1
µs
L=150nH, T
j
=125oC
Rth(j-c)
K/W
0.052
Junction to case
Notes: (3) RG value is the test condition's value for decision of the switching times,
not recommended value. Please, determine the suitable RG value after the
measurement of switching waveforms(overshoot voltage, etc.)with appliance mounted.
(4)Counter arm IGBT VGE=-15V
* Please contact our representatives at order.
* For improvement, specifications are subject to change without notice.
* For actual application, please confirm this spec sheet is the newest revision.