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MB84VD22293EE-85PBS PDF预览

MB84VD22293EE-85PBS

更新时间: 2024-11-29 14:43:27
品牌 Logo 应用领域
富士通 - FUJITSU 静态存储器内存集成电路
页数 文件大小 规格书
57页 1165K
描述
Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA71, PLASTIC, FBGA-71

MB84VD22293EE-85PBS 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:BGA包装说明:TFBGA, BGA71,8X12,32
针数:71Reach Compliance Code:compliant
HTS代码:8542.32.00.71风险等级:5.27
Is Samacsys:N最长访问时间:85 ns
其他特性:512K X 16-BIT SRAM ALSO AVAILABLEJESD-30 代码:R-PBGA-B71
JESD-609代码:e0长度:12 mm
内存密度:33554432 bit内存集成电路类型:MEMORY CIRCUIT
内存宽度:16混合内存类型:FLASH+SRAM
功能数量:1端子数量:71
字数:2097152 words字数代码:2000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-25 °C组织:2MX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装等效代码:BGA71,8X12,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH峰值回流温度(摄氏度):NOT SPECIFIED
电源:3 V认证状态:Not Qualified
座面最大高度:1.2 mm子类别:Other Memory ICs
最大压摆率:0.053 mA最大供电电压 (Vsup):3.3 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7 mmBase Number Matches:1

MB84VD22293EE-85PBS 数据手册

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FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-50207-4E  
Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM  
CMOS  
32M (× 8/×16) FLASH MEMORY &  
8M (× 8/×16) STATIC RAM  
MB84VD2228XEA/EE-85  
MB84VD2229XEA/EE-85  
FEATURES  
• Power Supply Voltage of 2.7 V to 3.3 V  
• High Performance  
85 ns maximum access time (Flash)  
70 ns maximum access time (SRAM)  
• Operating Temperature  
–25°C to +85°C  
• Package 71-ball FBGA  
(Continued)  
PRODUCT LINE UP  
Flash Memory  
SRAM  
-85  
+0.3 V  
–0.3 V  
+0.3 V  
–0.3 V  
Power Supply Voltage (V)  
VCCf*= 3.0V  
VCCs*= 3.0V  
Max. Address Access Time (ns)  
Max. CE Access Time (ns)  
Max. OE Access Time (ns)  
85  
85  
35  
70  
70  
35  
*: Both VCCf and VCCs must be in recommended operation range when either part is being accessed.  
PACKAGE  
71-ball plastic FBGA  
(BGA-71P-M01)  

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