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MB84VD22292EA-85PBS PDF预览

MB84VD22292EA-85PBS

更新时间: 2024-01-21 15:42:58
品牌 Logo 应用领域
富士通 - FUJITSU 静态存储器内存集成电路
页数 文件大小 规格书
57页 1165K
描述
Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA71, PLASTIC, FBGA-71

MB84VD22292EA-85PBS 技术参数

是否Rohs认证: 不符合生命周期:Contact Manufacturer
零件包装代码:BGA包装说明:TFBGA, BGA71,8X12,32
针数:71Reach Compliance Code:compliant
HTS代码:8542.32.00.71风险等级:5.27
最长访问时间:85 ns其他特性:512K X 16-BIT SRAM ALSO AVAILABLE
JESD-30 代码:R-PBGA-B71JESD-609代码:e0
长度:12 mm内存密度:33554432 bit
内存集成电路类型:MEMORY CIRCUIT内存宽度:16
混合内存类型:FLASH+SRAM功能数量:1
端子数量:71字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-25 °C
组织:2MX16封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA71,8X12,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度):NOT SPECIFIED电源:3 V
认证状态:Not Qualified座面最大高度:1.2 mm
子类别:Other Memory ICs最大压摆率:0.053 mA
最大供电电压 (Vsup):3.3 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子面层:Tin/Lead (Sn/Pb)端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:7 mm
Base Number Matches:1

MB84VD22292EA-85PBS 数据手册

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MB84VD2228XEA/EE-85/MB84VD2229XEA/EE-85  
FUJITSU LIMITED  
For further information please contact:  
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The information and circuit diagrams in this document are  
presented as examples of semiconductor device applications, and  
are not intended to be incorporated in devices for actual use. Also,  
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