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MB35-10 PDF预览

MB35-10

更新时间: 2024-11-12 14:43:23
品牌 Logo 应用领域
美台 - DIODES 局域网二极管
页数 文件大小 规格书
2页 66K
描述
35A, 1000V, SILICON, BRIDGE RECTIFIER DIODE, METAL, MB, 4 PIN

MB35-10 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:METAL, MB, 4 PIN针数:4
Reach Compliance Code:unknown风险等级:5.25
最小击穿电压:1000 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:S-MUFM-D4湿度敏感等级:1
最大非重复峰值正向电流:400 A元件数量:4
相数:1端子数量:4
最大输出电流:35 A封装主体材料:METAL
封装形状:SQUARE封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):225认证状态:Not Qualified
最大重复峰值反向电压:1000 V表面贴装:NO
端子形式:SOLDER LUG端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MB35-10 数据手册

 浏览型号MB35-10的Datasheet PDF文件第2页 
MB15(W) / 25(W) / 35(W)  
HIGH CURRENT SILICON BRIDGE RECTIFIER  
DESIGNS,  
GBPC35/W  
NEW  
R
FOR  
RECOMMENDED  
, GBPC25/W  
GBPC15/W  
NOT  
USE  
Features  
, O  
·
·
·
·
·
High Conductivity  
Metal Case  
Superior Thermal Design  
Surge Ratings to 400A  
Terminals Solderable per MIL-STD-202,  
Method 208  
MB-35  
MB-35W  
H
B
L
B
M
E
·
Universal Terminals; Snap-on, Solder or P.C.  
Board Mounting  
A
H
J
A
C
(AC)  
Mechanical Data  
H
(+)  
·
·
Terminals: 0.25" Faston Terminals  
Case material - UL Flammability Rating  
Classification 94V-0  
A
(AC)  
K
(+)  
J
A
C
(-)  
(AC)  
·
·
·
Moisture sensitivity: Level 1 per J-STD-020A  
Approx Weight: 29 grams  
Mounting Position: Bolt Down on Heat-sink with  
Silicone Thermal Compound Between Bridge and  
Mounting Surface for Maximum Heat Transfer  
Efficiency  
(AC)  
( - )  
MB-35/W  
Min  
G
Dim  
A
Max  
28.4  
28.7  
B
·
·
Mounting Torque: 20 in. lb. Max.  
Polarity: Polarity Symbols Marked on Case  
10.97  
15.5  
11.23  
17.6  
25.4  
15.3  
C
E
G
H
13.3  
4.9 Æ Nominal  
18.6 19.6  
J
All Dimensions in mm  
Suffix “W” denotes wire leads  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Symbol  
VRRM  
VRMS  
VDC  
-05  
50  
35  
50  
-1  
-2  
-4  
-6  
-8  
-10  
1000  
700  
Units  
Characteristic  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
V
V
V
Maximum DC Blocking Voltage  
100  
1000  
Maximum Average  
Rectified Output Current  
@ TC = 55°C  
MB15  
MB25  
MB35  
15.0  
25.0  
35.0  
A
A
V
I(AV)  
Peak Forward Surge Current Single  
Half Sine-Wave Superimposed on  
Rated Load (JEDEC Method)  
MB15  
MB25  
MB35  
300  
300  
400  
IFSM  
Maximum Instantaneous @ 7.5A  
Forward Voltage Drop per @12.5A  
Rated Load (JEDEC Method) @17.5A  
MB15  
MB25  
MB35  
1.1  
1.1  
1.2  
VF  
IR  
Maximum Reverse DC current at Rated  
DC Blocking Voltage (per Element)  
@TA  
=
25°C  
@TA = 100°C  
10  
1.0  
µA  
mA  
I2t rating for fusing (8.3ms)  
MB15  
MB25  
MB35  
373  
373  
664  
A2s  
I2t  
RqJC  
Typical Thermal Resistance (Note 1)  
2.5  
°C/W  
TJ, TSTG  
Operating and Storage Temperature Range  
-55 to +150  
°C  
Notes: 1. Thermal Resistance from junction to case  
DS21303 Rev. 6 - 3  
1 of 2  
MB15(W)/25(W)/35(W)  

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