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MB3035S-E3/4W PDF预览

MB3035S-E3/4W

更新时间: 2024-11-11 20:41:31
品牌 Logo 应用领域
威世 - VISHAY 功效瞄准线二极管
页数 文件大小 规格书
5页 150K
描述
DIODE 30 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT PACKAGE-3, Rectifier Diode

MB3035S-E3/4W 技术参数

生命周期:Obsolete零件包装代码:D2PAK
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.82
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.66 VJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2最大非重复峰值正向电流:200 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:30 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:35 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MB3035S-E3/4W 数据手册

 浏览型号MB3035S-E3/4W的Datasheet PDF文件第2页浏览型号MB3035S-E3/4W的Datasheet PDF文件第3页浏览型号MB3035S-E3/4W的Datasheet PDF文件第4页浏览型号MB3035S-E3/4W的Datasheet PDF文件第5页 
M30x5S, MB30x5S, MI30x5S  
www.vishay.com  
Vishay General Semiconductor  
Schottky Barrier Rectifier  
FEATURES  
TO-220AB  
• Power pack  
• Guardring for overvoltage protection  
• Low power loss, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
• High frequency operation  
3
2
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
245 °C (for TO-263AB package)  
1
M30xxS  
PIN 1  
PIN 3  
PIN 2  
CASE  
• Solder bath temperature 275 °C maximum, 10 s per  
JESD22-B106 (for TO-220AB and TO-262AA package)  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
TO-263AB  
TO-262AA  
K
K
TYPICAL APPLICATIONS  
For use in low voltage, high frequency rectifier of switching  
mode power supplies, freewheeling diodes, DC/DC  
converters, and polarity protection application.  
A
3
NC  
MB30xxS  
2
MECHANICAL DATA  
1
MI30xxS  
Case: TO-220AB, TO-263AB, and TO-262AA  
NC  
A
PIN 1  
K
PIN 2  
K
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
HEATSINK  
PIN 3  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
PRIMARY CHARACTERISTICS  
IF(AV)  
30 A  
Polarity: As marked  
VRRM  
35 V, 45 V  
200 A  
Mounting Torque: 10 in-lbs maximum  
IFSM  
VF at IF = 30 A  
TJ max.  
0.61 V  
150 °C  
TO-220AB, TO-263AB,  
TO-262AA  
Package  
Diode variations  
Single  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
M(B,I)3035S  
M(B,I)3045S  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (fig.1)  
VRRM  
35  
45  
V
A
IF(AV)  
30  
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
200  
A
Peak repetitive reverse current at tp = 2.0 μs, 1 kHz  
Voltage rate of change (rated VR)  
IRRM  
dV/dt  
TJ  
2.0  
10 000  
V/μs  
°C  
- 65 to + 150  
- 65 to + 175  
Operating junction and storage temperature range  
TSTG  
Revision: 13-Aug-13  
Document Number: 88952  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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