Datasheet > MAZS110G0L

MAZS110G0L

更新时间： 2024-09-17 19:40:07

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中文翻译

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数据手册

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MAZS110G0L 数据手册

This product complies with the RoHS Directive (EU 2002/95/EC).

Zener Diodes

MAZSxxxG Series

Silicon planar type

For constant voltage, constant current, waveform clip-

per and surge absorption circuit

■ Features

■ Package

•

• Low noise type

Code

• V_Zrank classified(V_Z= 2.4 V to 39 V)

SSMini2-F4

Pin Name

1: Anode

2: Cathode

•

■ Absolute Maximum Ratings T_a= 25°C

■ Marking Symbol

Parameter

Symbol

I_FRM

P_tot

Rating

200

Unit

°C

Repetitive peak forward current

Total power dissipation ^*

Junction temperature

Refer to the list of the electrical

characteristics within part numbers

150

T_j

150

■ Internal Connection

Storage temperature

T_stg

−55 to +150

°C

Note) : With a printed circuit board

■ Common Electrical Characteristics T_a= 25°C 3°C ^*

Parameter

Symbol

V_F

Conditions

Min

Typ

Max

Unit

Forward voltage

I_F= 10 mA

0.9

1.0

Zener voltage ^*

V_Z

I_Z

Specified value

Reverse current

I_R

V_RSpecified value

µA

Ω

Refer to the list of the

Zener rise operating resistance

Zener operating resistance

Temperature coefficient of zener voltage ^*

R_ZK

R_Z

I_Z

Specified value

electrical characteristics

within part numbers

Ω

S_Z

mV/°C

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. Rated input/output frequency: 5 MHz

3. 1: The V_Zvalue is for the temperature of 25°C. In other cases, carry out the temperature compensation.

2: Guaranteed at 20 ms after power application.

3: T = 25°C to 150°C

Publication date: October 2007

SKE00034BED

12 3 4 5 6 7 8

中文翻译

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