19-1463; Rev 0; 5/99
+3 .6 V, 1 W Au t o ra m p in g P o w e r
Am p lifie r fo r 9 0 0 MHz Ap p lic a t io n s
MAX235
Ge n e ra l De s c rip t io n
Fe a t u re s
The MAX2235 low-voltage, silicon RF power amplifier
(PA) is designed for use in the 900MHz frequency band.
It operates directly from a single +2.7V to +5.5V supply,
making it suitable for use with 3-cell NiCd or 1-cell Li-Ion
batteries. The device delivers +30dBm (1W) typical out-
put power from a +3.6V supply or +28dBm from a +2.7V
supply.
♦ 800MHz to 1000MHz Operation
♦ High Output Power at 836MHz
+32.5dBm at +5.0V
+30dBm at +3.6V
+29dBm at +3.0V
+28dBm at +2.7V
The MAX2235’s gain is adjustable over a 37dB range.
A power-control pin controls gain and bias to maintain
optimum efficiency, even at lower output power levels,
thus e xte nd ing the op e ra ting life of the b a tte ry. At
+30dBm output power, efficiency is typically 47%. An
additional power-saving feature is a shutdown mode
that typically reduces supply current below 1µA.
♦ +2.7V to +5.5V Single-Supply Operation
♦ Automatic Power-Up/Power-Down Ramp
♦ Direct On/Off Keying (OOK) without Intersymbol
Interference or VCO Pulling
♦ 37dB Power-Control Range
A key feature of this PA is its autoramping capability.
During turn-on and turn-off periods, the RF envelope is
controlled to approximate a raised cosine on the rising
and falling edge, thereby minimizing transient noise
and spectral splatter. The ramp time is set by selecting
the value of an external capacitor.
♦ 47% Efficiency
♦ <1µA Supply Current in Shutdown Mode
♦ Small 20-Pin TSSOP Package with Heat Slug
The MAX2235 is intended for use in constant envelope
applications such as AMPS, two-way paging, or FSK-
based communications in the 900MHz ISM band. The
de vic e is a va ila ble in a the rma lly e nha nc e d 20-pin
TSSOP package with a heat slug.
Ord e rin g In fo rm a t io n
PART
TEMP. RANGE
PIN-PACKAGE
MAX2235EUP
-40°C to +85°C
20 TSSOP-EP
Ap p lic a t io n s
900MHz ISM-Band Applications
Two-Way Pagers
P in Co n fig u ra t io n
TOP VIEW
Analog Cellular Phones
RFIN
GND
1
2
3
4
5
6
7
8
9
20 GC
Microcellular GSM (Power Class 5)
Wireless Data Networks
19 SHDN
18 GND
17 GND
V
CC
Fu n c t io n a l Dia g ra m
V
CC
MAX2235
V
CC
16 RFOUT
15 RFOUT
14 GND
13 GND
12 REF
V
CC
V
V
V
CC
CC CC
4
3
5
8, 9
GND
GND
11
12
19
20
RAMP
REF
MAX2235
V
CC
BIAS
SHDN
GC
V
CC
RFOUT
15, 16
GND 10
11 RAMP
1
TSSOP-EP
RFIN
NOTE: THE GROUND OF THE OUTPUT STAGE IS CONNECTED TO THE
VGA
UNDERSIDE METAL SLUG.
2
6, 7, 10
GND
13, 14, 17, 18, SLUG
GND
GND
NOTE: SOLDER UNDERSIDE OF METAL SLUG TO BOARD GND PLANE.
________________________________________________________________ Maxim Integrated Products
1
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