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MAX17080GTL+ PDF预览

MAX17080GTL+

更新时间： 2024-02-27 05:36:05
品牌 Logo 应用领域
美信 - MAXIM 稳压器开关式稳压器或控制器电源电路开关式控制器信息通信管理PC
页数 文件大小 规格书
48页 983K
描述
AMD 2-/3-Output Mobile Serial VID Controller

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MAX17080GTL+ 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：,Reach Compliance Code：unknown
风险等级：5.69JESD-609代码：e3
湿度敏感等级：1峰值回流温度（摄氏度）：260
端子面层：TIN处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

MAX17080GTL+ 数据手册

 浏览型号MAX17080GTL+的Datasheet PDF文件第2页浏览型号MAX17080GTL+的Datasheet PDF文件第3页浏览型号MAX17080GTL+的Datasheet PDF文件第4页浏览型号MAX17080GTL+的Datasheet PDF文件第6页浏览型号MAX17080GTL+的Datasheet PDF文件第7页浏览型号MAX17080GTL+的Datasheet PDF文件第8页 
AMD 2-/3-Output Mobile Serial  
VID Controller  
MAX1780  
ELECTRICAL CHARACTERISTICS (continued)  
(Circuit of Figure 2, V = 12V, V  
= V  
= V  
= V  
= V  
= 5V, V  
= 1.8V, V  
= V  
= V  
= V  
,
PGND  
IN  
CC  
DD  
IN3  
SHDN  
PGD_IN  
DDIO  
OPTION  
GNDS_  
AGND  
V
FBDC  
_ = V  
= V  
= V  
= V  
= 1.2V, all DAC codes set to the 1.2V code, T = 0°C to +85°C, unless otherwise noted.  
CSN_ A  
FBAC_  
OUT3  
CSP_  
Typical values are at T = +25°C.)  
A
PARAMETER  
SYMBOL  
CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
FAULT DETECTION  
PWM mode  
250  
300  
350  
mV  
Skip mode and output  
has not reached the  
regulation voltage  
Output Overvoltage Trip  
Threshold  
(SMPS1 and SMPS2 Only)  
Measured at  
FBDC_, rising  
edge  
1.80  
1.85  
1.90  
V
OVP_  
V
Minimum OVP  
threshold  
0.8  
10  
Output Overvoltage Fault  
Propagation Delay (SMPS1 and  
SMPS2 only)  
t
FBDC_ forced 25mV above trip threshold  
µs  
OVP  
Output Undervoltage Protection  
Trip Threshold  
Measured at FBDC_ or OUT3 with respect  
to unloaded output voltage  
V
-450  
-400  
10  
-350  
mV  
µs  
UVP  
Output Undervoltage Fault  
Propagation Delay  
t
FBDC_ forced 25mV below trip threshold  
UVP  
Lower threshold,  
falling edge  
(undervoltage)  
Measured at  
-350  
-300  
-250  
FBDC_ or OUT3  
with respect to  
unloaded output  
voltage,15mV  
hysteresis (typ)  
PWRGD Threshold  
mV  
Upper threshold,  
rising edge  
(overvoltage)  
+150  
+200  
10  
+250  
FBDC_ or OUT3 forced 25mV outside the  
PWRGD trip thresholds  
PWRGD Propagation Delay  
PWRGD, Output Low Voltage  
PWRGD Leakage Current  
t
I
µs  
V
PWRGD  
PWRGD  
I
= 4mA  
0.4  
1
SINK  
High state, PWRGD forced to 5.5V, T  
+25°C  
=
A
µA  
PWRGD Startup Delay and  
Transition Blanking Time  
Measured from the time when FBDC_ and  
OUT3 reach the target voltage  
t
20  
30  
10  
µs  
%
BLANK  
Measured at THRM, with respect to V  
falling edge, 115mV hysteresis (typ)  
,
CC  
VRHOT Trip Threshold  
VRHOT Delay  
29.5  
-100  
30.5  
THRM forced 25mV below the VRHOT trip  
threshold, falling edge  
t
µS  
VRHOT  
VRHOT, Output Low Voltage  
VRHOT Leakage Current  
THRM Input Leakage  
I
= 4mA  
0.4  
1
V
SINK  
High state, VRHOT forced to 5V, T = +25°C  
µA  
nA  
°C  
A
T
A
= +25°C  
+100  
Thermal-Shutdown Threshold  
GATE DRIVERS  
T
Hysteresis = 15°C  
+160  
SHDN  
High state (pullup)  
0.9  
0.7  
2.5  
2.5  
2.0  
0.6  
BST_ - LX_ forced  
to 5V (Note 4)  
DH_ Gate-Driver On-Resistance  
DL_ Gate-Driver On-Resistance  
R
R
_
ꢀ
ꢀ
ON(DH )  
Low state (pulldown)  
DL_, high state  
DL_, low state  
0.7  
_
ON(DL )  
0.25  
_______________________________________________________________________________________  
5
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