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MAX17080GTL+

更新时间: 2024-01-15 12:07:12
品牌 Logo 应用领域
美信 - MAXIM 稳压器开关式稳压器或控制器电源电路开关式控制器信息通信管理PC
页数 文件大小 规格书
48页 983K
描述
AMD 2-/3-Output Mobile Serial VID Controller

MAX17080GTL+ 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:5.69JESD-609代码:e3
湿度敏感等级:1峰值回流温度(摄氏度):260
端子面层:TIN处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MAX17080GTL+ 数据手册

 浏览型号MAX17080GTL+的Datasheet PDF文件第1页浏览型号MAX17080GTL+的Datasheet PDF文件第3页浏览型号MAX17080GTL+的Datasheet PDF文件第4页浏览型号MAX17080GTL+的Datasheet PDF文件第5页浏览型号MAX17080GTL+的Datasheet PDF文件第6页浏览型号MAX17080GTL+的Datasheet PDF文件第7页 
AMD 2-/3-Output Mobile Serial  
VID Controller  
ABSOLUTE MAXIMUM RATINGS  
(Note 1)  
V
V
V
, V  
to AGND ..............................-0.3V to +6V  
LX2 to BST2..............................................................-6V to +0.3V  
LX3 to PGND (Note 2) ..............................................-0.6V to +6V  
DD, IN3, CC DDIO  
PWRGD to AGND.....................................................-0.3V to +6V  
SHDN to AGND ........................................................-0.3V to +6V  
GNDS1, GNDS2, THRM, VRHOT to AGND..............-0.3V to +6V  
CSP_, CSN_, ILIM12 to AGND .................................-0.3V to +6V  
SVC, SVD, PGD_IN to AGND ...................................-0.3V to +6V  
FBDC_, FBAC_, OUT3 to AGND ..............................-0.3V to +6V  
OSC, TIME, OPTION, ILIM3 to AGND........-0.3V to (V  
BST1, BST2 to AGND.............................................-0.3V to +36V  
BST1, BST2 to V .................................................-0.3V to +30V  
DH1 to LX1 ..............................................-0.3V to (V  
DH2 to LX2 ..............................................-0.3V to (V  
+ 0.3V)  
+ 0.3V)  
BST1  
BST2  
DL1 to PGND..............................................-0.3V to (V + 0.3V)  
DD  
DL2 to PGND..............................................-0.3V to (V + 0.3V)  
DD  
Continuous Power Dissipation (T = +70°C)  
A
+ 0.3V)  
40-Pin TQFN (derate 22.2mW/°C above +70°C) .......1778mW  
Operating Temperature Range .........................-40°C to +105°C  
Junction Temperature......................................................+150°C  
Storage Temperature Range.............................-65°C to +150°C  
Lead Temperature (soldering, 10s) .................................+300°C  
CC  
MAX1780  
DD  
BST3 to AGND...................................(V  
LX1 to BST1..............................................................-6V to +0.3V  
LX3 RMS Current (Note 2)..................................................... 3A  
- 0.3V) to (V  
+ 6V)  
DD  
LX3  
Note 1: Absolute Maximum Ratings measured with 20MHz scope bandwidth.  
Note 2: LX3 has clamp diodes to PGND and IN3. If continuous current is applied through these diodes, thermal limits must be observed.  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional  
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to  
absolute maximum rating conditions for extended periods may affect device reliability.  
ELECTRICAL CHARACTERISTICS  
(Circuit of Figure 2, V = 12V, V  
= V  
= V  
= V  
= V  
= 5V, V  
= 1.8V, V  
= V  
= V  
= V  
,
PGND  
IN  
CC  
DD  
IN3  
SHDN  
PGD_IN  
DDIO  
OPTION  
GNDS_  
AGND  
V
FBDC  
_ = V  
= V  
= V  
= V  
= 1.2V, all DAC codes set to the 1.2V code, T = 0°C to +85°C, unless otherwise noted.  
CSN_ A  
FBAC_  
OUT3  
CSP_  
Typical values are at T = +25°C.)  
A
PARAMETER  
SYMBOL  
CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
INPUT SUPPLIES  
V
Drain of external high-side MOSFET  
4
26  
IN  
V
V , V  
CC DD  
4.5  
2.7  
1.0  
5.5  
5.5  
2.7  
BIAS  
Input Voltage Range  
V
V
IN3  
V
DDIO  
V
Undervoltage-Lockout  
V
rising, 50mV typical hysteresis,  
CC  
CC  
V
4.10  
4.25  
1.8  
4.45  
V
V
UVLO  
Threshold  
latched, UV fault  
Falling edge, typical hysteresis = 1.1V,  
faults cleared and DL_ forced high when  
V
V
Power-On Reset Threshold  
CC  
V
CC  
falls below this level  
Undervoltage-Lockout  
V
DDIO  
rising, 100mV typical hysteresis,  
DDIO  
0.7  
2.5  
0.8  
2.6  
5
0.9  
2.7  
10  
V
V
Threshold  
latched, UV fault  
V
Undervoltage-Lockout  
IN3  
V
rising, 100mV typical hysteresis  
IN3  
Threshold  
Skip mode, FBDC_ and OUT3 forced  
above their regulation points  
Quiescent Supply Current (V  
)
I
I
mA  
CC  
CC  
Skip mode, FBDC_ and OUT3 forced  
above their regulation points, T = +25°C  
A
Quiescent Supply Currents (V  
)
0.01  
10  
1
25  
200  
1
µA  
µA  
µA  
µA  
DD  
DD  
Quiescent Supply Current (V  
)
I
DDIO  
DDIO  
Skip mode, OUT3 forced above its  
regulation point  
Quiescent Supply Current (IN3)  
Shutdown Supply Current (V  
I
80  
IN3  
)
SHDN = GND, T = +25°C  
0.01  
CC  
A
2
_______________________________________________________________________________________  

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