AMD 2-/3-Output Mobile Serial
VID Controller
ABSOLUTE MAXIMUM RATINGS
(Note 1)
V
V
V
, V
to AGND ..............................-0.3V to +6V
LX2 to BST2..............................................................-6V to +0.3V
LX3 to PGND (Note 2) ..............................................-0.6V to +6V
DD, IN3, CC DDIO
PWRGD to AGND.....................................................-0.3V to +6V
SHDN to AGND ........................................................-0.3V to +6V
GNDS1, GNDS2, THRM, VRHOT to AGND..............-0.3V to +6V
CSP_, CSN_, ILIM12 to AGND .................................-0.3V to +6V
SVC, SVD, PGD_IN to AGND ...................................-0.3V to +6V
FBDC_, FBAC_, OUT3 to AGND ..............................-0.3V to +6V
OSC, TIME, OPTION, ILIM3 to AGND........-0.3V to (V
BST1, BST2 to AGND.............................................-0.3V to +36V
BST1, BST2 to V .................................................-0.3V to +30V
DH1 to LX1 ..............................................-0.3V to (V
DH2 to LX2 ..............................................-0.3V to (V
+ 0.3V)
+ 0.3V)
BST1
BST2
DL1 to PGND..............................................-0.3V to (V + 0.3V)
DD
DL2 to PGND..............................................-0.3V to (V + 0.3V)
DD
Continuous Power Dissipation (T = +70°C)
A
+ 0.3V)
40-Pin TQFN (derate 22.2mW/°C above +70°C) .......1778mW
Operating Temperature Range .........................-40°C to +105°C
Junction Temperature......................................................+150°C
Storage Temperature Range.............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
CC
MAX1780
DD
BST3 to AGND...................................(V
LX1 to BST1..............................................................-6V to +0.3V
LX3 RMS Current (Note 2)..................................................... 3A
- 0.3V) to (V
+ 6V)
DD
LX3
Note 1: Absolute Maximum Ratings measured with 20MHz scope bandwidth.
Note 2: LX3 has clamp diodes to PGND and IN3. If continuous current is applied through these diodes, thermal limits must be observed.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(Circuit of Figure 2, V = 12V, V
= V
= V
= V
= V
= 5V, V
= 1.8V, V
= V
= V
= V
,
PGND
IN
CC
DD
IN3
SHDN
PGD_IN
DDIO
OPTION
GNDS_
AGND
V
FBDC
_ = V
= V
= V
= V
= 1.2V, all DAC codes set to the 1.2V code, T = 0°C to +85°C, unless otherwise noted.
CSN_ A
FBAC_
OUT3
CSP_
Typical values are at T = +25°C.)
A
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
INPUT SUPPLIES
V
Drain of external high-side MOSFET
4
26
IN
V
V , V
CC DD
4.5
2.7
1.0
5.5
5.5
2.7
BIAS
Input Voltage Range
V
V
IN3
V
DDIO
V
Undervoltage-Lockout
V
rising, 50mV typical hysteresis,
CC
CC
V
4.10
4.25
1.8
4.45
V
V
UVLO
Threshold
latched, UV fault
Falling edge, typical hysteresis = 1.1V,
faults cleared and DL_ forced high when
V
V
Power-On Reset Threshold
CC
V
CC
falls below this level
Undervoltage-Lockout
V
DDIO
rising, 100mV typical hysteresis,
DDIO
0.7
2.5
0.8
2.6
5
0.9
2.7
10
V
V
Threshold
latched, UV fault
V
Undervoltage-Lockout
IN3
V
rising, 100mV typical hysteresis
IN3
Threshold
Skip mode, FBDC_ and OUT3 forced
above their regulation points
Quiescent Supply Current (V
)
I
I
mA
CC
CC
Skip mode, FBDC_ and OUT3 forced
above their regulation points, T = +25°C
A
Quiescent Supply Currents (V
)
0.01
10
1
25
200
1
µA
µA
µA
µA
DD
DD
Quiescent Supply Current (V
)
I
DDIO
DDIO
Skip mode, OUT3 forced above its
regulation point
Quiescent Supply Current (IN3)
Shutdown Supply Current (V
I
80
IN3
)
SHDN = GND, T = +25°C
0.01
CC
A
2
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