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MASMLJ170A PDF预览

MASMLJ170A

更新时间: 2024-11-03 21:02:59
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
8页 466K
描述
Trans Voltage Suppressor Diode, 3000W, 170V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, PLASTIC PACKAGE-2

MASMLJ170A 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DO-214AB
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.52
最大击穿电压:209 V最小击穿电压:189 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-214AB
JESD-30 代码:R-PDSO-C2JESD-609代码:e0
湿度敏感等级:1最大非重复峰值反向功率耗散:3000 W
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:1.61 W
认证状态:Not Qualified最大重复峰值反向电压:170 V
表面贴装:YES技术:AVALANCHE
端子面层:Tin/Lead (Sn/Pb)端子形式:J BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MASMLJ170A 数据手册

 浏览型号MASMLJ170A的Datasheet PDF文件第2页浏览型号MASMLJ170A的Datasheet PDF文件第3页浏览型号MASMLJ170A的Datasheet PDF文件第4页浏览型号MASMLJ170A的Datasheet PDF文件第5页浏览型号MASMLJ170A的Datasheet PDF文件第6页浏览型号MASMLJ170A的Datasheet PDF文件第7页 

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