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MASMLJ150AE3 PDF预览

MASMLJ150AE3

更新时间: 2024-11-03 21:02:59
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
8页 466K
描述
Trans Voltage Suppressor Diode, 3000W, 150V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC PACKAGE-2

MASMLJ150AE3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DO-214AB
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.53
Is Samacsys:N最大击穿电压:185 V
最小击穿电压:167 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214ABJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:3000 W元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:1.61 W认证状态:Not Qualified
最大重复峰值反向电压:150 V表面贴装:YES
技术:AVALANCHE端子面层:Matte Tin (Sn)
端子形式:J BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

MASMLJ150AE3 数据手册

 浏览型号MASMLJ150AE3的Datasheet PDF文件第2页浏览型号MASMLJ150AE3的Datasheet PDF文件第3页浏览型号MASMLJ150AE3的Datasheet PDF文件第4页浏览型号MASMLJ150AE3的Datasheet PDF文件第5页浏览型号MASMLJ150AE3的Datasheet PDF文件第6页浏览型号MASMLJ150AE3的Datasheet PDF文件第7页 

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