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MASMLG36AE3 PDF预览

MASMLG36AE3

更新时间: 2024-11-02 21:02:59
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
8页 466K
描述
Trans Voltage Suppressor Diode, 3000W, 36V V(RWM), Unidirectional, 1 Element, Silicon, DO-215AB, ROHS COMPLIANT, PLASTIC PACKAGE-2

MASMLG36AE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-215AB
包装说明:R-PDSO-G2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.42
最大击穿电压:44.2 V最小击穿电压:40 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-215AB
JESD-30 代码:R-PDSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:3000 W
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:1.61 W
认证状态:Not Qualified最大重复峰值反向电压:36 V
表面贴装:YES技术:AVALANCHE
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

MASMLG36AE3 数据手册

 浏览型号MASMLG36AE3的Datasheet PDF文件第2页浏览型号MASMLG36AE3的Datasheet PDF文件第3页浏览型号MASMLG36AE3的Datasheet PDF文件第4页浏览型号MASMLG36AE3的Datasheet PDF文件第5页浏览型号MASMLG36AE3的Datasheet PDF文件第6页浏览型号MASMLG36AE3的Datasheet PDF文件第7页 

与MASMLG36AE3相关器件

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MASMLG36AE3/TR MICROSEMI

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Trans Voltage Suppressor Diode, 3000W, 36V V(RWM), Unidirectional, 1 Element, Silicon, DO-
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Trans Voltage Suppressor Diode, 3000W, 36V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
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Trans Voltage Suppressor Diode, 3000W, 36V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
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MASMLG36CATR MICROSEMI

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Trans Voltage Suppressor Diode, 3000W, 36V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MASMLG36E3 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 3000W, 36V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MASMLG36E3TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 3000W, 36V V(RWM), Unidirectional, 1 Element, Silicon, DO-