Datasheet > MASMCJLCE90AE3TR

MASMCJLCE90AE3TR

更新时间： 2024-11-01 14:01:31

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网光电二极管
页数	文件大小	规格书
4页	318K
描述
Trans Voltage Suppressor Diode, 1500W, 90V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMCJ, 2 PIN

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MASMCJLCE90AE3TR 技术参数

是否Rohs认证：	符合	生命周期：	Active
零件包装代码：	DO-214AB	包装说明：	R-PDSO-C2
针数：	2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.24	Is Samacsys：	N
其他特性：	HIGH RELIABILITY	最大击穿电压：	111 V
最小击穿电压：	100 V	击穿电压标称值：	105.5 V
最大钳位电压：	146 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-214AB	JESD-30 代码：	R-PDSO-C2
最大非重复峰值反向功率耗散：	1500 W	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	UNIDIRECTIONAL
最大功率耗散：	5 W	认证状态：	Not Qualified
最大重复峰值反向电压：	90 V	子类别：	Transient Suppressors
表面贴装：	YES	技术：	AVALANCHE
端子形式：	C BEND	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

MASMCJLCE90AE3TR 数据手册

TECHNICAL DATA SHEET

Gort Road Business Park, Ennis, Co. Clare, Ireland.

Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298

6 Lake Street, Lawrence, MA 01841

Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803

Website: http://www.microsemi.com

- High Reliability controlled devices

- Unidirectional (A) construction

- Available in both J-bend and Gull-wing terminations

- Selections for 6.5 to 170 V standoff voltages (VWM)

SURFACE MOUNT

1500 Watt Low Capacitance

Transient Voltage Suppressor

LEVELS

M, MA, MX, MXL

DEVICES

MSMCJLCE6.5A thru MSMCJLCE170A, e3

and MSMCGLCE6.5A thru MSMCGLCE170A, e3

FEATURES

High reliability controlled devices with fabrication and assembly lot traceability

100% surge tested devices

Low capacitance of 100 pF or less

Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes

specify various screening and conformance inspection options based on MIL-PRF-19500. Refer

to MicroNote 129 for more details on the screening options.

Axial-lead equivalent packages for thru-hole mounting available as MLCE6.5A to MLCE170CA

Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B

RoHS compliant devices available by adding an “e3” suffix

3σ lot norm screening performed on Standby Current I_D

APPLICATIONS / BENEFITS

1500 Watts of Peak Pulse Power at 10/1000 s

Low capacitance for data line protection to 1 MHz

Protection for aircraft fast data rate lines up to Level 5 Waveform 4 and Level 2 Waveform 5A in

RTCA/DO-160D (also see MicroNote 130) & ARINC 429 with bit rates of 100 kb/s (per ARINC

429, Part 1, par 2.4.1.1)

IEC 61000-4-2 ESD 15 kV (air), 8 kV (contact)

IEC 61000-4-5 (lightning) as further detailed in MLCE6.5 thru MLCE170A data sheet

T1/E1 Line Cards

Base Stations, WAN & XDSL Interfaces

CSU/DSU Equipment

MAXIMUM RATINGS

Peak Pulse Power dissipation at 25 ºC: 1500 watts at 10/1000 μs (also see Figures 1,2, and 3)

with impulse repetition rate (duty factor) of 0.01 % or less

Clamping Factor: 1.40 @ Full Rated power:

1.30 @ 50 % Rated power

t_clamping(0 V to V_BRmin): Less than 5x10^-9seconds

Operating and Storage temperatures: -65 ºC to +150 ºC

Steady State power dissipation: 5.0W @ TL = 50 ºC

Thermal Resistance: 20 ºC /W (typical junction to lead (tab) at mounting plane

When pulse testing, do not pulse in opposite direction. (See “Schematic Applications” section

herein and Figures 5 & 6 for further protection in both directions)

Solder temperatures: 260 ºC for 10 s (maximum)

RF01002 Rev A, June 2010

High Reliability Product Group

Page 1 of 4

12 3 4

中文翻译

下载PDF

与MASMCJLCE90AE3TR相关器件

型号	品牌	获取价格	描述	数据表
MASMCJLCE90ATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 90V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MASMCJLCE90E3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 90V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MASMCJLCE90E3TR	MICROSEMI	获取价格	1500W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC PACKAGE-2
MASMCJLCE90TR	MICROSEMI	获取价格	1500W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, PLASTIC PACKAGE-2
MASMLG100A	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 3000W, 100V V(RWM), Unidirectional, 1 Element, Silicon, DO
MASMLG100A/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 3000W, 100V V(RWM), Unidirectional, 1 Element, Silicon, DO
MASMLG100AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 3000W, 100V V(RWM), Unidirectional, 1 Element, Silicon, DO
MASMLG100AE3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 3000W, 100V V(RWM), Unidirectional, 1 Element, Silicon, DO
MASMLG100AE3TR	MICROSEMI	获取价格	3000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB, ROHS COMPLIANT, PLASTIC, SMLG, 2 PIN
MASMLG100ATR	MICROSEMI	获取价格	3000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB, PLASTIC PACKAGE-2

与MASMCJLCE90AE3TR相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

23
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

24
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

46
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

54

产品中心

服务支持

精选活动

关于我们

帮助中心

MASMCJLCE90AE3TR

MASMCJLCE90AE3TR 技术参数

MASMCJLCE90AE3TR 数据手册

与MASMCJLCE90AE3TR相关器件

与MASMCJLCE90AE3TR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MASMCJLCE90AE3TR

MASMCJLCE90AE3TR 技术参数

MASMCJLCE90AE3TR 数据手册

与MASMCJLCE90AE3TR相关器件

与MASMCJLCE90AE3TR相关文章

您还可以找

您在本页遇到什么问题？