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MASMCJLCE8.0E3

更新时间： 2024-11-01 18:33:07
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
4页 222K
描述
Trans Voltage Suppressor Diode, 1500W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC PACKAGE-2

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MASMCJLCE8.0E3 技术参数

是否Rohs认证：符合生命周期：Obsolete
零件包装代码：DO-214AB包装说明：R-PDSO-C2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.67Is Samacsys：N
最大击穿电压：10.9 V最小击穿电压：8.89 V
击穿电压标称值：9.895 V最大钳位电压：15 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-214AB
JESD-30 代码：R-PDSO-C2JESD-609代码：e3
最大非重复峰值反向功率耗散：1500 W元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
最大功率耗散：5 W认证状态：Not Qualified
参考标准：MIL-19500最大重复峰值反向电压：8 V
子类别：Transient Suppressors表面贴装：YES
技术：AVALANCHE端子面层：MATTE TIN
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

MASMCJLCE8.0E3 数据手册

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SMCGLCE6.5 thru SMCGLCE170A, e3  
SMCJLCE6.5 thru SMCJLCE170A, e3  
1500 WATT LOW CAPACITANCE  
SURFACE MOUNT TRANSIENT  
VOLTAGE SUPPRESSOR  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This surface mount Transient Voltage Suppressor (TVS) product family includes a  
rectifier diode element in series and opposite direction to achieve low capacitance  
below 100 pF. They are also available as RoHS Compliant with an e3 suffix. The low  
TVS capacitance may be used for protecting higher frequency applications in inductive  
switching environments or electrical systems involving secondary lightning effects per  
IEC61000-4-5 as well as RTCA/DO-160D or ARINC 429 for airborne avionics. They  
also protect from ESD and EFT per IEC61000-4-2 and IEC61000-4-4. If bipolar  
transient capability is required, two of these low capacitance TVS devices may be used  
in parallel and opposite directions (anti-parallel) for complete ac protection (Figure 6).  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
•
•
Available in standoff voltage range of 6.5 to 200 V  
Low capacitance of 100 pF or less  
•
•
•
1500 Watts of Peak Pulse Power at 10/1000 μs  
Low capacitance for data line protection to 1 MHz  
Molding compound flammability rating: UL94V-O  
Protection for aircraft fast data rate lines up to  
Level 5 Waveform 4 and Level 2 Waveform 5A in  
RTCA/DO-160D (also see MicroNote 130) &  
ARINC 429 with bit rates of 100 kb/s (per ARINC  
429, Part 1, par 2.4.1.1)  
Two different terminations available in C-bend (modified J-  
Bend with DO-214AB) or Gull-wing (DO-215AB)  
•
Options for screening in accordance with MIL-PRF-19500  
for JAN, JANTX, and JANTXV are available by adding MQ,  
MX, or MV prefixes respectively to part numbers  
•
IEC61000-4-2 ESD 15 kV (air), 8 kV (contact)  
•
IEC61000-4-5 (Lightning) as further detailed in  
LCE6.5 thru LCE170A data sheet  
•
•
Optional 100% screening for avionics grade is available by  
adding MA prefix to part number for 100% temperature  
cycle –55ºC to 125ºC (10X) as well as surge (3X) and 24  
hours HTRB with post test VBR & IR  
•
•
•
T1/E1 Line Cards  
Base Stations, WAN & XDSL Interfaces  
CSU/DSU Equipment  
RoHS Compliant devices available by adding an “e3” suffix  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
CASE: Molded, surface mountable  
•
1500 Watts of Peak Pulse Power dissipation at 25oC with  
repetition rate of 0.01% or less*  
•
•
TERMINALS: Gull-wing or C-bend (modified J-  
bend) tin-lead or RoHS compliant annealed  
matte-tin plating solderable per MIL-STD-750,  
method 2026  
•
Clamping Factor: 1.4 @ Full Rated power  
1.30 @ 50% Rated power  
•
•
•
•
tclamping (0 volts to V(BR) min): Less than 5x10-9 seconds  
Operating and Storage temperatures: -65 to +150oC  
Steady State power dissipation: 5.0W @ TL = 50oC  
•
•
POLARITY: Cathode indicated by band  
MARKING: Part number with abbreviated prefix  
(CLC6.5A, CLC6.5Ae3, CLC33, CLC33e3, etc.)  
THERMAL RESISTANCE: 20oC/W (typical junction to  
lead (tab) at mounting plane  
•
TAPE & REEL option: Standard per EIA-481-B  
with 16 mm tape, 750 per 7 inch reel or 2500 per  
13 inch reel (add “TR” suffix to part number)  
* When pulse testing, do not pulse in opposite direction  
(see “Schematic Applications” section herein and  
Figures 5 & 6 for further protection in both directions)  
ELECTRICAL CHARACTERISTICS @ 25oC  
Maximum Maximum  
Reverse  
IIB  
VWIB  
VPIB  
Peak  
Inverse  
Blocking  
Voltage  
Volts  
MICROSEMI  
Part Number  
MICROSEMI  
Part Number  
Maximum  
Capacitance Working  
@ 0 Volts,  
f = 1 MHz  
Breakdown Voltage  
Reverse  
Leakage  
Clamping  
Voltage  
Stand-Off  
Voltage  
Maximum  
Peak Pulse  
Inverse  
Blocking  
Leakage  
Current  
μA  
VBR @ I(BR)  
Inverse  
Blocking  
Voltage  
Volts  
@VWM  
@IPP  
VC  
VWM  
Current IPP  
@10/1000  
Amps  
Gull-Wing  
“G”  
Modified  
“J”  
Volts  
ID  
Bend Lead  
Bend Lead  
Volts  
Volts  
pF  
μA  
1000  
1000  
500  
500  
250  
250  
100  
100  
50  
MIN  
7.22  
7.22  
7.78  
7.78  
8.33  
8.33  
8.89  
8.89  
9.44  
9.44  
10.0  
10.0  
MAX  
8.82  
7.98  
9.51  
8.60  
10.2  
9.21  
10.9  
9.83  
11.5  
10.4  
12.2  
11.1  
mA  
10  
10  
10  
10  
10  
10  
1
1
1
1
1
SMCGLCE6.5  
SMCGLCE6.5A  
SMCGLCE7.0  
SMCGLCE7.0A  
SMCGLCE7.5  
SMCGLCE7.5A  
SMCGLCE8.0  
SMCGLCE8.0A  
SMCGLCE8.5  
SMCGLCE8.5A  
SMCGLCE9.0  
SMCGLCE9.0A  
SMCJLCE6.5  
SMCJLCE6.5A  
SMCJLCE7.0  
SMCJLCE7.0A  
SMCJLCE7.5  
SMCJLCE7.5A  
SMCJLCE8.0  
SMCJLCE8.0A  
SMCJLCE8.5  
SMCJLCE8.5A  
SMCJLCE9.0  
SMCJLCE9.0A  
6.5  
6.5  
7.0  
7.0  
7.5  
7.5  
8.0  
8.0  
8.5  
8.5  
9.0  
9.0  
12.3  
11.2  
13.3  
12.0  
14.3  
12.9  
15.0  
13.6  
15.9  
14.4  
16.9  
15.4  
100  
100  
100  
100  
100  
100  
100  
100  
94  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
75  
75  
75  
75  
75  
75  
75  
75  
75  
75  
75  
75  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
50  
10  
10  
100  
89  
97  
1
Copyright © 2009  
2-11-2009 REV J  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
1234

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与MASMCJLCE8.0E3相关器件

型号 品牌 获取价格 描述 数据表
MASMCJLCE8.0E3/TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MASMCJLCE8.0E3TR MICROSEMI

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 		1500W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC PACKAGE-2
MASMCJLCE8.0TR MICROSEMI

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 		1500W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, PLASTIC PACKAGE-2
MASMCJLCE8.5 MICROSEMI

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MASMCJLCE8.5/TR MICROSEMI

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MASMCJLCE8.5A MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon, DO
MASMCJLCE8.5AE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon, DO
MASMCJLCE8.5AE3TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon, DO
MASMCJLCE8.5ATR MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon, DO
MASMCJLCE8.5E3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon, DO

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