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MASMBJ120AE3/TR PDF预览

MASMBJ120AE3/TR

更新时间： 2024-11-12 14:00:31
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
4页 167K
描述
Trans Voltage Suppressor Diode, 600W, 120V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2

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中文翻译

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MASMBJ120AE3/TR 技术参数

是否Rohs认证：符合生命周期：Active
包装说明：R-PDSO-C2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.45Is Samacsys：N
最大击穿电压：147 V最小击穿电压：133 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-214AA
JESD-30 代码：R-PDSO-C2JESD-609代码：e3
最大非重复峰值反向功率耗散：600 W元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性：UNIDIRECTIONAL
最大功率耗散：1.38 W认证状态：Not Qualified
最大重复峰值反向电压：120 V表面贴装：YES
技术：AVALANCHE端子面层：MATTE TIN
端子形式：J BEND端子位置：DUAL
处于峰值回流温度下的最长时间：40Base Number Matches：1

MASMBJ120AE3/TR 数据手册

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TECHNICAL DATA SHEET  
Gort Road Business Park, Ennis, Co. Clare, Ireland.  
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298  
6 Lake Street, Lawrence, MA 01841  
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803  
Website: http://www.microsemi.com  
- High Reliability controlled devices  
SURFACE MOUNT 600 W  
Transient Voltage Suppressor  
- Unidirectional (A) and Bidirectional (CA) construction  
- Available in both J-bend and Gull-wing terminations  
- Selections for 5.0 to 170 V standoff voltages (VWM  
)
LEVELS  
M, MA, MX, MXL  
DEVICES  
MSMBJ5.0A thru MSMBJ170CA, e3  
and MSMBG5.0A thru MSMBG170CA, e3  
FEATURES  
ƒ
ƒ
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High reliability controlled devices with wafer fabrication and assembly lot traceability  
100 % surge tested devices  
Optional up screening available by replacing the M prefix with MA, MX or MXL. These  
prefixes specify various screening and conformance inspection options based on  
MIL-PRF-19500. Refer to MicroNote 129 for more details on the screening options.  
ƒ
Axial-leaded equivalent packages for through-hole mounting available as MP6KE6.8A to  
MP6KE200CA  
Refer to table below  
for dimensions  
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ƒ
ƒ
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B  
RoHS compliant devices available by adding an “e3” suffix  
3σ lot norm screening performed on Standby Current ID  
APPLICATIONS / BENEFITS  
ƒ
ƒ
ƒ
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Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.  
Protection from switching transients & induced RF  
Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4  
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:  
o
o
o
o
Class 1: MSMB5.0A to MSMB120CA  
Class 2: MSMB5.0A to MSMB60CA  
Class 3: MSMB5.0A to MSMB30CA  
Class 4: MSMB5.0A to MSMB15CA  
ƒ
Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:  
o
o
Class 1: MSMB5.0A to MSMB36CA  
Class 2: MSMB5.0A to MSMB18CA  
MAXIMUM RATINGS  
ƒ
Peak Pulse Power dissipation at 25 ºC: 600 watts at 10/1000 μs (also see Figures 1, 2, and  
3) with impulse repetition rate (duty factor) of 0.01 % or less  
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ƒ
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tclamping (0 volts to VBR min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional  
Operating and Storage temperature: -65 °C to +150 °C  
Thermal resistance: 25 °C/W junction to lead, or 90 °C/W junction to ambient when mounted  
on FR4 PC board (1oz Cu) with recommended footprint (see page 2)  
ƒ
Steady-State Power dissipation: 5 watts at TL = 25 ºC, or 1.38 watts at TA = 25 ºC when  
mounted on FR4 PC board with recommended footprint (see page 2)  
ƒ
ƒ
Forward Surge at 25 ºC: 100 Amp peak impulse of 8.3 ms half-sine wave (unidirectional only)  
Solder temperatures: 260 ºC for 10 s (maximum)  
RF01000 Rev B, Sept 2011  
High Reliability Product Group  
Page 1 of 4  
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 		Trans Voltage Suppressor Diode, 600W, 120V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MASMBJ120CA/TR13 MICROSEMI

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 		Trans Voltage Suppressor Diode, 600W, 120V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MASMBJ120CA/TR7 MICROSEMI

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 		Trans Voltage Suppressor Diode, 600W, 120V V(RWM), Bidirectional, 1 Element, Silicon, DO-2

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