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MASMBJ110CAE3TR PDF预览

MASMBJ110CAE3TR

更新时间： 2024-11-13 04:21:47
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管电视
页数 文件大小 规格书
4页 161K
描述
600W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2

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中文翻译

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MASMBJ110CAE3TR 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：DO-214AA
包装说明：R-PDSO-C2针数：2
Reach Compliance Code：unknown风险等级：5.63
其他特性：HIGH RELIABILITY最大击穿电压：135 V
最小击穿电压：122 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-214AAJESD-30 代码：R-PDSO-C2
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值反向功率耗散：600 W元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性：BIDIRECTIONAL
最大功率耗散：1.38 W认证状态：Not Qualified
最大重复峰值反向电压：110 V表面贴装：YES
技术：AVALANCHE端子面层：MATTE TIN
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED

MASMBJ110CAE3TR 数据手册

 浏览型号MASMBJ110CAE3TR的Datasheet PDF文件第2页浏览型号MASMBJ110CAE3TR的Datasheet PDF文件第3页浏览型号MASMBJ110CAE3TR的Datasheet PDF文件第4页 
TECHNICAL DATA SHEET  
Gort Road Business Park, Ennis, Co. Clare, Ireland.  
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298  
6 Lake Street, Lawrence, MA 01841  
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803  
Website: http://www.microsemi.com  
- High Reliability controlled devices  
SURFACE MOUNT 600 W  
Transient Voltage Suppressor  
- Unidirectional (A) and Bidirectional (CA) construction  
- Available in both J-bend and Gull-wing terminations  
- Selections for 5.0 to 170 V standoff voltages (VWM  
)
LEVELS  
M, MA, MX, MXL  
DEVICES  
MSMBJ5.0A thru MSMBJ170CA, e3  
and MSMBG5.0A thru MSMBG170CA, e3  
FEATURES  
ƒ
ƒ
ƒ
High reliability controlled devices with wafer fabrication and assembly lot traceability  
100 % surge tested devices  
Optional up screening available by replacing the M prefix with MA, MX or MXL. These  
prefixes specify various screening and conformance inspection options based on  
MIL-PRF-19500. Refer to MicroNote 129 for more details on the screening options.  
ƒ
Axial-leaded equivalent packages for through-hole mounting available as MP6KE6.8A to  
MP6KE200CA  
Refer to table below  
for dimensions  
ƒ
ƒ
ƒ
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B  
RoHS compliant devices available by adding an “e3” suffix  
3σ lot norm screening performed on Standby Current ID  
APPLICATIONS / BENEFITS  
ƒ
ƒ
ƒ
ƒ
Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.  
Protection from switching transients & induced RF  
Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4  
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:  
o
o
o
o
Class 1: MSMB5.0A to MSMB120CA  
Class 2: MSMB5.0A to MSMB60CA  
Class 3: MSMB5.0A to MSMB30CA  
Class 4: MSMB5.0A to MSMB15CA  
ƒ
Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:  
o
o
Class 1: MSMB5.0A to MSMB36CA  
Class 2: MSMB5.0A to MSMB18CA  
MAXIMUM RATINGS  
ƒ
Peak Pulse Power dissipation at 25 ºC: 600 watts at 10/1000 μs (also see Figures 1, 2, and  
3) with impulse repetition rate (duty factor) of 0.01 % or less  
ƒ
ƒ
ƒ
tclamping (0 volts to VBR min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional  
Operating and Storage temperature: -65 °C to +150 °C  
Thermal resistance: 25 °C/W junction to lead, or 90 °C/W junction to ambient when mounted  
on FR4 PC board (1oz Cu) with recommended footprint (see page 2)  
ƒ
Steady-State Power dissipation: 5 watts at TL = 25 ºC, or 1.38 watts at TA = 25 ºC when  
mounted on FR4 PC board with recommended footprint (see page 2)  
ƒ
ƒ
Forward Surge at 25 ºC: 100 Amp peak impulse of 8.3 ms half-sine wave (unidirectional only)  
Solder temperatures: 260 ºC for 10 s (maximum)  
RF01000 Rev B, Sept 2011  
High Reliability Product Group  
Page 1 of 4  
1234

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MASMBJ110TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 600W, 110V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MASMBJ11A/TR MICROSEMI

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