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MAS3795 PDF预览

MAS3795

更新时间: 2024-11-15 04:17:03
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
3页 85K
描述
Silicon epitaxial planar type

MAS3795 技术参数

生命周期:Active零件包装代码:DFP
包装说明:R-PDSO-F3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.60风险等级:5.79
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:MIXER DIODE
频带:L BANDJESD-30 代码:R-PDSO-F3
元件数量:1端子数量:3
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified表面贴装:YES
技术:SCHOTTKY端子形式:FLAT
端子位置:DUALBase Number Matches:1

MAS3795 数据手册

 浏览型号MAS3795的Datasheet PDF文件第2页浏览型号MAS3795的Datasheet PDF文件第3页 
Schottky Barrier Diodes (SBD)  
MAS3795  
Silicon epitaxial planar type  
Unit: mm  
+0.05  
–0.02  
+0.05  
For high-speed switching circuits  
0.33  
0.10  
–0.02  
3
Features  
High-density mounting is possible  
Optimum for high frequency rectification because of its short  
reverse recovery time (trr)  
Low forward voltage VF optimum for low voltage rectification  
VF = < 0.3 V (at IF = 1 mA)  
+0.05  
1
2
0.23  
–0.02  
(0.40)(0.40)  
0.80 0.05  
1.20 0.05  
5°  
SSS-Mini type 3-pin package  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Reverse voltage (DC)  
Peak reverse voltage  
Forward current (DC)  
Peak forward current  
Junction temperature  
Storage temperature  
Symbol  
VR  
Rating  
Unit  
V
1: Anode  
2: N.C.  
3: Cathode  
30  
VRM  
IF  
30  
30  
V
SSSMini3-F1 Package  
mA  
mA  
°C  
Marking Symbol: M2  
IFM  
150  
Tj  
125  
Internal Connection  
Tstg  
55 to +125  
°C  
3
1
2
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Reverse current (DC)  
Forward voltage (DC)  
Symbol  
IR  
Conditions  
Min  
Typ  
Max  
30  
Unit  
µA  
V
VR = 30 V  
IF = 1 mA  
VF1  
VF2  
Ct  
0.3  
1.0  
IF = 30 mA  
Terminal capacitance  
Reverse recovery time *  
VR = 1 V, f = 1 MHz  
1.5  
1.0  
pF  
ns  
trr  
IF = IR = 10 mA  
Irr = 1 mA, RL = 100 Ω  
Detection efficiency  
η
Vin = 3 V(peak) , f = 30 MHz  
RL = 3.9 k, CL = 10 pF  
65  
%
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body  
and the leakage of current from the operating equipment.  
2. Rated input/output frequency: 2 GHz  
3. : trr measuring instrument  
*
Bias Application Unit N-50BU  
Input Pulse  
Output Pulse  
trr  
tp  
tr  
t
10%  
IF  
t
A
90%  
VR  
Irr = 1 mA  
tp = 2 µs  
tr = 0.35 ns  
δ = 0.05  
IF = 10 mA  
IR = 10 mA  
RL = 100 Ω  
Pulse Generator  
(PG-10N)  
Wave Form Analyzer  
(SAS-8130)  
Rs = 50 Ω  
Ri = 50 Ω  
Publication date: June 2002  
SKH00117AED  
1

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