5秒后页面跳转
MAS3795E PDF预览

MAS3795E

更新时间: 2024-11-15 20:56:43
品牌 Logo 应用领域
松下 - PANASONIC 光电二极管
页数 文件大小 规格书
3页 78K
描述
Mixer Diode, L Band, Silicon, ROHS COMPLIANT, SSSMINI3-F1, 3 PIN

MAS3795E 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DFP包装说明:R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.60
风险等级:5.79外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:MIXER DIODE频带:L BAND
JESD-30 代码:R-PDSO-F3JESD-609代码:e6
湿度敏感等级:1元件数量:2
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
表面贴装:YES技术:SCHOTTKY
端子面层:Tin/Bismuth (Sn/Bi)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MAS3795E 数据手册

 浏览型号MAS3795E的Datasheet PDF文件第2页浏览型号MAS3795E的Datasheet PDF文件第3页 
Schottky Barrier Diodes (SBD)  
MAS3795E  
Silicon epitaxial planar type  
Unit: mm  
+0.05  
–0.02  
+0.05  
For high-speed switching circuits  
0.33  
0.10  
–0.02  
3
Features  
High-density mounting is possible  
Optimum for high frequency rectification because of its short  
reverse recovery time (trr)  
Low forward voltage VF optimum for low voltage rectification  
VF = < 0.3 V (at IF = 1 mA)  
+0.05  
1
2
0.23  
–0.02  
(0.40)(0.40)  
0.80 0.05  
1.20 0.05  
5°  
SSS-Mini type 3-pin package  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Reverse voltage (DC)  
Peak reverse voltage  
Forward current (DC) Single  
Double  
Symbol  
VR  
Rating  
Unit  
V
1: Anode 1  
2: Anode 2  
3: Cathode 1, 2  
SSSMini3-F1 Package  
30  
VRM  
IF  
30  
30  
V
mA  
Marking Symbol: M3  
20  
Peak forward current Single  
Double  
IFM  
150  
mA  
Internal Connection  
110  
3
Junction temperature  
Storage temperature  
Tj  
125  
°C  
°C  
Tstg  
55 to +125  
1
2
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Reverse current (DC)  
Forward voltage (DC)  
Symbol  
IR  
Conditions  
Min  
Typ  
Max  
30  
Unit  
µA  
V
VR = 30 V  
IF = 1 mA  
VF1  
VF2  
Ct  
0.3  
1.0  
IF = 30 mA  
Terminal capacitance  
Reverse recovery time *  
VR = 1 V, f = 1 MHz  
1.5  
1.0  
pF  
ns  
trr  
IF = IR = 10 mA  
Irr = 1 mA, RL = 100 Ω  
Detection efficiency  
η
Vin = 3 V(peak) , f = 30 MHz  
RL = 3.9 k, CL = 10 pF  
65  
%
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body  
and the leakage of current from the operating equipment.  
2. Rated input/output frequency: 2 GHz  
3. : trr measuring instrument  
*
Bias Application Unit N-50BU  
Input Pulse  
Output Pulse  
trr  
tp  
tr  
t
10%  
IF  
t
A
90%  
VR  
Irr = 1 mA  
tp = 2 µs  
tr = 0.35 ns  
δ = 0.05  
IF = 10 mA  
IR = 10 mA  
RL = 100 Ω  
Pulse Generator  
(PG-10N)  
Wave Form Analyzer  
(SAS-8130)  
Rs = 50 Ω  
Ri = 50 Ω  
Publication date: June 2002  
SKH00118AED  
1

与MAS3795E相关器件

型号 品牌 获取价格 描述 数据表
MAS3795EG PANASONIC

获取价格

Mixer Diode, Silicon, ROHS COMPLIANT, SSSMINI3-F2, 3 PIN
MAS3864C60CB DYNEX

获取价格

MASK ROM, 8KX8, 60ns, CMOS, CDIP28
MAS3864C60CC DYNEX

获取价格

MASK ROM, 8KX8, 60ns, CMOS, CDIP28
MAS3864C60CD DYNEX

获取价格

MASK ROM, 8KX8, 60ns, CMOS, CDIP28
MAS3864C60CE DYNEX

获取价格

MASK ROM, 8KX8, 60ns, CMOS, CDIP28
MAS3864C60CS DYNEX

获取价格

MASK ROM, 8KX8, 60ns, CMOS, CDIP28
MAS3864C60FB DYNEX

获取价格

MASK ROM, 8KX8, 60ns, CMOS, CDFP28
MAS3864C60FC DYNEX

获取价格

MASK ROM, 8KX8, 60ns, CMOS, CDFP28
MAS3864CFB DYNEX

获取价格

MASK ROM, 8KX8, 60ns, CMOS, CDFP28
MAS3864T60CB DYNEX

获取价格

MASK ROM, 8KX8, 60ns, CMOS, CDIP28