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MART65KP48A

更新时间： 2024-11-22 05:55:19
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
5页 239K
描述
Trans Voltage Suppressor Diode, 65000W, 48V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, CASE 5A, 2 PIN

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MART65KP48A 数据手册

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TECHNICAL DATA SHEET  
Gort Road Business Park, Ennis, Co. Clare, Ireland.  
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298  
6 Lake Street, Lawrence, MA 01841  
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803  
Website: http://www.microsemi.com  
- High Reliability controlled devices  
- Thru hole mounting  
- Unidirectional (A) and Bidirectional (CA) construction  
- Selections for 48 V to 75 V standoff voltages (VWM)  
65 kW Transient Voltage Suppressor  
LEVELS  
M, MA, MX, MXL  
DEVICES  
MRT65KP48A thru MRT65KP75CA, e3  
FEATURES  
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High reliability controlled devices with wafer fabrication and assembly lot traceability  
100 % surge tested devices  
Suppresses transients up to 65 kW @ 6.4/69 µs  
Fast response with less than 5ns turn-on time  
Preferred 65kW TVS for aircraft power bus protection  
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes  
specify various screening and conformance inspection options based on MIL-PRF-19500.  
Refer to MicroNote 129 for more details on the screening options.  
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Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B  
RoHS Compliant devices available by adding “e3” suffix  
CASE 5A  
3σ lot norm screening performed on Standby Current ID  
APPLICATIONS / BENEFITS  
.
.
Pin injection protection per RTCA/DO-160F up to Level 5 for Waveform 4 (6.4/69 µs) and up  
to Level 3 for Waveform 5A (40/120 s) at 70 oC  
Compatible with “abnormal surge voltage (dc)” in 16.6.2.4 (Category A, B, and Z) of  
RTCA/DO-160F  
.
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The MRT65KP48A is designed for Category A in protecting 80 V components**  
The MRT65KP54A or 60A is designed for Category B in protecting 90 V or 100 V  
components**  
.
The MRT65KP75A is designed for Category Z in protecting 125 V components**  
** including switching transistors, MOSFETS & IGBTs in offline switching power supplies  
MAXIMUM RATINGS  
.
Peak Pulse Power dissipation at 25 °C: 65 kW at @ 6.4/69 µs per waveform in Figure 8  
(derate per Figure 2) with impulse repetition rate (duty factor) of 0.01 % max  
Operating and Storage temperature: -55 °C to +150 °C  
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Steady-state power dissipation: 7 W @ TL = 25 °C  
Temperature coefficient of voltage: +0.100 %/°C max  
Solder temperatures: 260 °C for 10 s (maximum)  
RF01015 Rev A, October 2010  
High Reliability Product Group  
Page 1 of 5  
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 		Trans Voltage Suppressor Diode, 65000W, 54V V(RWM), Unidirectional, 1 Element, Silicon, RO
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